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Author Pernice, W.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. url  openurl
  Title High speed and high efficiency travelling wave single-photon detectors embedded in nanophotonic circuits Type Miscellaneous
  Year 2012 Publication arXiv Abbreviated Journal arXiv  
  Volume 1108.5299 Issue Pages 1-23  
  Keywords (down) optical waveguides, waveguide SSPD, guantum photonics, jitter, detection efficiency  
  Abstract Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides which allows us to drastically increase the absorption length for incoming photons. When operating the detectors close to the critical current we achieve high on-chip single photon detection efficiency up to 91% at telecom wavelengths, with uncertainty dictated by the variation of the waveguide photon flux. We also observe remarkably low dark count rates without significant compromise of detection efficiency. Furthermore, our detectors are fully embedded in a scalable silicon photonic circuit and provide ultrashort timing jitter of 18ps. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low jitter time on chip overcomes a major barrier in integrated quantum photonics.  
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  Notes Approved no  
  Call Number Serial 845  
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Author Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A. url  openurl
  Title Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures Type Abstract
  Year 2019 Publication Proc. Amorphous and Nanostructured Chalcogenides Abbreviated Journal Proc. Amorphous and Nanostructured Chalcogenides  
  Volume Issue Pages 47-48  
  Keywords (down) optical waveguides  
  Abstract The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.  
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  Publisher Technical University of Moldova Place of Publication Editor  
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  Area Expedition Conference  
  Notes Poster Approved no  
  Call Number Serial 1281  
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Author Korneev, Alexander; Golt'sman, Gregory; Pernice, Wolfram url  openurl
  Title Photonic integration meets single-photon detection Type Miscellaneous
  Year 2015 Publication Laser Focus World Abbreviated Journal Laser Focus World  
  Volume 51 Issue 5 Pages 47-50  
  Keywords (down) optical waveguide SSPD, SNSPD  
  Abstract By embedding superconducting nanowire single-photon detectors (SNSPDs) in nanophotonic circuits, these waveguide-integrated detectors are a key building block for future on-chip quantum computing applications.  
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  Notes Approved no  
  Call Number RPLAB @ akorneev @ Serial 1126  
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Author Goltsman, G. url  doi
openurl 
  Title Superconducting thin film as infrared heterodyne and direct detectors Type Conference Article
  Year 2017 Publication 16th ISEC Abbreviated Journal 16th ISEC  
  Volume Issue Pages 1-3  
  Keywords (down) optical waveguide SSPD, SNSPD  
  Abstract We present our recent achievements in the development of superconducting nanowire single-photon detectors (SNSPDs) integrated with optical waveguides on a chip. We demonstrate both single-photon counting with up to 90% on-chip-quantum-efficiency (OCDE), and the heterodyne mixing with a close to the quantum limit sensitivity at the telecommunication wavelength using single device.  
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  Notes Approved no  
  Call Number 8314188 Serial 1323  
Permanent link to this record
 
 
Author Prokhodtsov, A.; An, P.; Kovalyuk, V.; Zubkova, E.; Golikov, A.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. url  doi
openurl 
  Title Optimization of on-chip photonic delay lines for telecom wavelengths Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages 051052  
  Keywords (down) optical delay lines  
  Abstract In this work, we experimentally studied optical delay lines on silicon nitride platform for telecomm wavelength (1550 nm). We modeled the group delay time and fabricated spiral optical delay lines with different waveguide widths and radii as well as measured their transmission. For the half etched rib waveguides we achieved the losses in the range of 3 dB/cm.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1196  
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Author Golikov, A.; Kovalyuk, V.; An, P.; Zubkova, E.; Ferrari, S.; Pernice, W.; Korneev, A.; Goltsman, G. url  doi
openurl 
  Title Silicon nitride nanophotonic circuit for on-chip spontaneous four-wave mixing Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages 051051  
  Keywords (down) O-ring resonator  
  Abstract Here we present an integrated nanophotonic circuit for on-chip spontaneous four-wave mixing. The fabricated device includes an O-ring resonator, a Bragg noch-filter as well as a nine-channel arrayed waveguide gratings (AWG) operated in the C-band wavelength range (1550 nm). The measured optical losses of the device (-6.8 dB) as well as a high Q-factor (> 1.2×105) shows a good potential for realizing the spontaneous four-wave mixing on the silicon nitride chip.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1193  
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Author Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory doi  isbn
openurl 
  Title Integrated contra-directional coupler for NV-centers photon filtering Type Conference Article
  Year 2020 Publication Proc. 32-nd EMSS Abbreviated Journal Proc. 32-nd EMSS  
  Volume Issue Pages 354-360  
  Keywords (down) NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings  
  Abstract We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds.  
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  ISSN 2724-0029 ISBN 978-88-85741-44-7 Medium  
  Area Expedition Conference 32nd European Modeling & Simulation Symposium  
  Notes Approved no  
  Call Number Serial 1839  
Permanent link to this record
 
 
Author Kuzin, Aleksei; Elmanov, Ilia; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory doi  isbn
openurl 
  Title Silicon nitride focusing grating coupler for input and output light of NV-centers Type Conference Article
  Year 2020 Publication Proc. 32-nd EMSS Abbreviated Journal Proc. 32-nd EMSS  
  Volume Issue Pages 349-353  
  Keywords (down) NV-centers, focusing grating coupler  
  Abstract Here we presented the numerical results for the calculation of focusing grating coupler efficiency in the visible wavelength range. Using the finite element method, the optimal geometric parameters, including filling factor and grating period for a central wavelength of 637 nm, were found. Obtained results allow to input/output single-photon radiation from NV-centers, and can be used for research and development of a scalable on-chip quantum optical computing.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2724-0029 ISBN 978-88-85741-44-7 Medium  
  Area Expedition Conference 32nd European Modeling & Simulation Symposium  
  Notes Approved no  
  Call Number Serial 1841  
Permanent link to this record
 
 
Author Edward Tong, C.-Y.; Loudkov, Denis N.; Paine, Scott N.; Marrone, Dan P.; Blundell, Raymond url  openurl
  Title Vector measurement of the beam pattern of a 1.5 THz superconducting HEB receiver Type Conference Article
  Year 2005 Publication Proc. 16th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 16th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 453-456  
  Keywords (down) NbTiN HEB mixers  
  Abstract Near-field vector beam pattern of the 1.5 THz superconducting Hot Electron Bolometer (HEB) receiver currently in operation in Northern Chile has been performed in our laboratory. Using an open waveguide probe, we have mapped both the amplitude and phase of the beam emerging from our 1.5 THz HEB receiver package, across a number of planes along the line of propagation of the radio-beam. With an integration time of about 100 ms per point, a signal-to-noise ratio of about 25 dB was achieved for a beam waist of 3.5 mm. These measurements have proved to be invaluable in achieving good alignment between the cryostat housing the HEB mixer and the remainder of the receiver and telescope optics. The accuracy of our beam measurement is estimated to be ±0.2 mm in position and ±5 arc minutes in angular displacement.  
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  Notes Approved no  
  Call Number Serial 1474  
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Author Finkel, Matvey; Vachtomin, Yuriy; Antipov, Sereey; Drakinski, Vladimir; Kaurova, Natalia; Voronov, Boris; Goltsman, Greeory url  openurl
  Title Gain bandwidth and noise temperature of NbTiN HEB mixer Type Conference Article
  Year 2003 Publication Proc. 14th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 14th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 276-285  
  Keywords (down) NbTiN HEB mixer  
  Abstract We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1500  
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