Gershenzon, E. M., Gershenzon, M. E., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1984). Heating of electrons in a superconductor in the resistive state by electromagnetic radiation. Sov. Phys. JETP, 59(2), 442–450.
Abstract: The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.
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Gershenzon, E. M., Gershenzon, M. E., Gol'tsman, G. N., Semyonov, A. D., & Sergeev, A. V. (1984). Heating of electrons in superconductor in the resistive state due to electromagnetic radiation. Solid State Communications, 50(3), 207–212.
Abstract: The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields.
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Il’in, K. S., Ptitsina, N. G., Sergeev, A. V., Gol’tsman, G. N., Gershenzon, E. M., Karasik, B. S., et al. (1998). Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films. Phys. Rev. B, 57(24), 15623–15628.
Abstract: A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
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Il'in, K. S., Karasik, B. S., Ptitsina, N. G., Sergeev, A. V., Gol'tsman, G. N., Gershenzon, E. M., et al. (1996). Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity. In Czech. J. Phys. (Vol. 46, pp. 857–858).
Abstract: Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
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Gousev, Y. P., Semenov, A. D., Gol'tsman, G. N., Sergeev, A. V., & Gershenzon, E. M. (1994). Electron-phonon interaction in disordered NbN films. Phys. B Condens. Mat., 194-196, 1355–1356.
Abstract: Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films.
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