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Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Lang, P. T.; Knott, W. J.; Leipold, I.; Renk, K. F.; Semenov, A. D.; Gol'tsman, G. N. |
Generation and detection of tunable ultrashort infrared and far-infrared radiation pulses of high intensity |
1992 |
Int. J. of Infrared and Millimeter Waves |
13 |
373-380 |
|
|
|
Maslennikov, S. N.; Finkel, M. I.; Antipov, S. V.; Polyakov, S. L.; Zhang, W.; Ozhegov, R.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Korotetskaya, Yu. P.; Kaurova, N. S.; Gol'tsman, G. N.; Voronov, B. M. |
Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz |
2006 |
Proc. 17th Int. Symp. Space Terahertz Technol. |
|
177-179 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N. |
Transitions of electrons between excited states of donors in germanium |
1971 |
JETP Lett. |
14 |
63-65 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Kinetics of electron and hole binding into excitons in germanium |
1983 |
Sov. Phys. JETP |
57 |
369-376 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Observation of the free-exciton spectrum at submillimeter wavelengths |
1972 |
JETP Lett. |
16 |
161-162 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Cross section for binding of free carriers into excitons in germanium |
1981 |
JETP Lett. |
33 |
574 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
1976 |
Sov. Phys. JETP |
43 |
116-122 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
1977 |
Sov. Phys. JETP |
45 |
555-565 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
1971 |
JETP Lett. |
14 |
241 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
Capture of photoexcited carriers by shallow impurity centers in germanium |
1979 |
Sov. Phys. JETP |
50 |
728-734 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Population and lifetime of excited states of shallow impurities in Ge |
1979 |
Sov. Phys. JETP |
49 |
355-362 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
1971 |
JETP Lett. |
14 |
185-186 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. |
Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium |
1986 |
Sov. Phys. JETP |
64 |
889-897 |
|
|
|
Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. |
The excitonic Zeeman effect in uniaxially-strained germanium |
1987 |
Sov. Phys. JETP |
65 |
1233-1241 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state |
1988 |
Sov. J. Low Temp. Phys. |
14 |
414-420 |
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