| |
Records |
Links |
|
Author |
Dieleman, Piter |
|
| |
Title |
Fundamental limitations of THz niobium and niobiumnitride SIS mixers |
Type |
Book Whole |
| |
Year |
1998 |
Publication |
|
Abbreviated Journal |
|
|
| |
Volume |
|
Issue |
|
Pages |
|
|
| |
Keywords  |
SIS |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
Ph.D. thesis |
|
| |
Publisher |
|
Place of Publication |
Rijksuniversiteit, Groningen |
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
529 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
|
| |
Title |
Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
Type |
Journal Article |
| |
Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
|
|
| |
Volume |
9 |
Issue |
2 |
Pages |
3216-3219 |
|
| |
Keywords |
RSFQ, NbN, SIS |
|
| |
Abstract |
A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1081 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. |
|
| |
Title |
Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ |
Type |
Journal Article |
| |
Year |
1986 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
| |
Volume |
20 |
Issue |
1 |
Pages |
99-103 |
|
| |
Keywords |
n-Ge, Hubbard upper zone conductivity, negative magnetoresistance |
|
| |
Abstract |
В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1759 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Kooi, Jacob Willem |
|
| |
Title |
Advanced receivers for submillimeter and far infrared astronomy |
Type |
Book Whole |
| |
Year |
2008 |
Publication |
University of Groningen |
Abbreviated Journal |
RUG |
|
| |
Volume |
|
Issue |
|
Pages |
|
|
| |
Keywords |
HEB, SIS, TES, NEP, noise temperature, IF bandwidth, waveguide, impedance, conversion gain, FTS, integrated array, stability, Allan variance, multi-layer antireflection coating |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
Doctoral thesis |
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
978-90-367-3653-4 |
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
881 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. |
|
| |
Title |
The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts |
Type |
Conference Article |
| |
Year |
2018 |
Publication |
Materials Today: Proc. |
Abbreviated Journal |
Materials Today: Proc. |
|
| |
Volume |
5 |
Issue |
13 |
Pages |
27301-27306 |
|
| |
Keywords |
graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor |
|
| |
Abstract |
We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
2214-7853 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1316 |
|
| Permanent link to this record |
