| Author |
Title |
Year |
Publication |
Volume |
Pages |
| Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
2010 |
Bull. Russ. Acad. Sci. Phys. |
74 |
100-102 |
| Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
2018 |
Microelectronic Engineering |
195 |
26-31 |
| Korneev, A.; Semenov, A.; Vodolazov, D.; Gol’tsman, G. N.; Sobolewski, R. |
Physics and operation of superconducting single-photon devices |
2017 |
Superconductors at the Nanoscale |
|
279-308 |
