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Author Gershenzon, E.M.; Gol'tsman, G.N.; Dzardanov, A.L.; Kuznetsov, E.A.
Title Superconducting UHF-limiter based on electron heating up Type Journal Article
Year 1992 Publication Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika
Volume 5 Issue 11 Pages 2164-2170
Keywords (up) electron heating, applications
Abstract The results of experimental investigation of fast-action 5HF-limiter are presented; the limiter is based on the utilization of electron hetaing phenomenon in thin superconducting films. The design of SHF-limiter, which is intended for operation at liquid helium temperatures and which has the form of a section of superconducting NbN microstrip line for 1-12 GHz rang, is described.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0235-8964 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1669
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Author Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M.
Title Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it Type Conference Article
Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 42 Issue 6 Pages 1142-1148
Keywords (up) energy spectrum, Ge, magnetic field
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1722
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Author Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F.
Title Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051050 (1 to 5)
Keywords (up) field-effect transistor, FET, carbon nanotube, CNT
Abstract In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1301
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Author Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A.
Title Response of carbon nanotube film transistor to the THz radiation Type Conference Article
Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 195 Issue Pages 05012 (1 to 2)
Keywords (up) field-effect transistor, FET, carbon nanotube, CNT
Abstract
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1317
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Author Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D.
Title Graphene-layer and graphene-nanoribbon FETs as THz detectors Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051054
Keywords (up) field-effect transistor, FET, monolayer graphene, graphene nanoribbons
Abstract We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1300
Permanent link to this record