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Author Rodriguez-Morales, F.; Zannoni, R.; Nicholson, J.; Fischetti, M.; Yngvesson, K. S.; Appenzeller, J. url  doi
openurl 
  Title Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube Type Journal Article
  Year 2006 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 89 Issue 8 Pages 083502  
  Keywords (down) carbon nanotube, GHz heterodyne detector, direct detector  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 565  
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Author Schwaab, G. W.; Hübers, H.-W.; Schubert, J.; Erichsen, Patrik; Gol'tsman, G.; Semenov, A.; Verevkin, A.; Cherednichenko, S.; Gershenzon, E. url  openurl
  Title A high resolution spectrometer for the investigation of molecular structures in the THZ range Type Conference Article
  Year 1999 Publication Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 530-538  
  Keywords (down) antireflection coatings, dielectric mirrors  
  Abstract A status report on the design study of a novel tunable far-infrared (TuFTR) spectrometer for the investigation of the structure of weakly bound molecular complexes is given. The goal is a sensitive TuFIR spectrometer with full frequency coverage from 1-6 THz. To hit the goal, advanced sources (e.g. p-Ge lasers) and detectors (e.g. superconducting hot electron bolometric (HEB) mixers) shall be employed to extend the technique of cavity ringdown spectroscopy, that is currently used at optical and infrared frequencies to the FIR spectral range. Critical for such a system are high-Q resonators that still allow good optical coupling, and wideband antireflection coatings to increase detector sensitivity and decrease optical path losses. 2 nd order effective media theory and an iterative multilayer algorithm have been employed to design wideband antireflection coatings for dielectrics with large dielectric constants like Ge or Si. Taking into account 6 layers, for Si bandwidths of 100% of the center frequency could be obtained with power reflectivities below 1% for both polarizations simultaneously. Wideband dielectric mirrors including absorption losses were also studied yielding a bandwidth of about 50% with reflectivities larger than 99.5%.  
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  Notes Approved no  
  Call Number Serial 1577  
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Author Zwiller, Vale<cc><81>ry; Blom, Hans; Jonsson, Per; Panev, Nikolay; Jeppesen, Sören; Tsegaye, Tedros; Goobar, Edgard; Pistol, Mats-Erik; Samuelson, Lars; Björk, Gunnar url  doi
openurl 
  Title Single quantum dots emit single photons at a time: Antibunching experiments Type Journal Article
  Year 2001 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 78 Issue 17 Pages 2476  
  Keywords (down) antibunching, quantum dot  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 502  
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Author Jang, Young Rae; Yoo, Keon-Ho; Park, Seung Min openurl 
  Title Rapid thermal annealing of ZnO thin films grown at room temperature Type Journal Article
  Year 2010 Publication J. Vac. Sci. Technol. A Abbreviated Journal  
  Volume 28 Issue 2 Pages 4  
  Keywords (down) Annealing  
  Abstract The authors successfully obtained high quality ZnO thin films by growing them at room temperature (RT) and postannealing by rapid thermal annealing (RTA). The thin films were grown by pulsed laser deposition on Si (100) substrates at RT, and RTA was performed under various temperatures and ambient conditions. Based on the UV emission to visible emission ratio in RT photoluminescence (PL) spectra, the optimum film was obtained at annealing temperature ~700 °C in an ambient of Ar, N2, or O2 at 0.1 Torr, while the optimum annealing temperature was above 1100 °C in the air ambient at atmospheric pressure. The morphology and structure of the films in different RTA conditions were investigated by using field emission scanning electron microscopy and grazing incidence x-ray diffraction, and were discussed in conjunction with the PL data.  
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  Notes Annealing Approved no  
  Call Number RPLAB @ gujma @ Serial 692  
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Author An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K. openurl 
  Title Infrared phototransistor using capacitively coupled two-dimensional electron gas layers Type Journal Article
  Year 2005 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 86 Issue Pages 172106 - 172106-3  
  Keywords (down) 2DEG  
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  Notes Approved no  
  Call Number RPLAB @ akorneev @ Serial 603  
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