Author |
Title |
Year |
Publication |
Volume |
Pages |
Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Limiting characteristic of fast superconducting bolometers |
1989 |
Sov. Phys.-Tech. Phys. |
34 |
195-199 |
Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N. |
Ultrafast superconducting bolometer receivers for terahertz applications |
2009 |
Proc. PIERS |
|
867 |
Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N. |
Temperature dependence of superconducting hot electron bolometers |
2013 |
Not published results: 24th international symposium on space terahertz technology |
|
|
Shurakov, A.; Lobanov, Y.; Goltsman, G. |
Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications |
2015 |
Supercond. Sci. Technol. |
29 |
023001 |
Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V. |
Limiting characteristics of fast-response superconducting bolometers |
1989 |
Zhurnal Tekhnicheskoi Fiziki |
59 |
11-120 |
Elmanov, I.; Sardi, F.; Xia, K.; Kornher, T.; Kovalyuk, V.; Prokhodtsov, A.; An, P.; Kuzin, A.; Elmanova, A.; Goltsman, G.; Kolesov, R. |
Development of focusing grating couplers for lithium niobate on insulator platform |
2020 |
J. Phys.: Conf. Ser. |
1695 |
012127 |
Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency |
2019 |
EPJ Web Conf. |
220 |
02009 |
Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
Graphene-based lateral Schottky diodes for detecting terahertz radiation |
2018 |
Proc. Optical Sensing and Detection V |
10680 |
30-39 |
Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. |
The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts |
2018 |
Materials Today: Proc. |
5 |
27301-27306 |
Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
Response of graphene based gated nanodevices exposed to THz radiation |
2015 |
EPJ Web of Conferences |
103 |
10003 (1 to 2) |
Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. |
Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors |
2018 |
Appl. Phys. Lett. |
112 |
141101 (1 to 5) |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
1988 |
Fizika i Tekhnika Poluprovodnikov |
22 |
540-543 |
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
1982 |
Optics and Spectroscopy |
52 |
454-455 |
Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
Population of excited-states of small admixtures in germanium |
1978 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
42 |
1154-1159 |
Gershenzon, E. M.; Goltsman, G. N. |
Zeeman effect in excited-states of donors in germanium |
1972 |
Sov. Phys. Semicond. |
6 |
509 |