|
Gershenzon, E. M., Goltsman, G. N., Semenov, A. D., & Sergeev, A. V. (1989). Limiting characteristic of fast superconducting bolometers. Sov. Phys.-Tech. Phys., 34, 195–199.
Abstract: Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
|
|
|
Ozhegov, R. V., Smirnov, A. V., Vakhtomin, Y. B., Smirnov, K. V., Divochiy, A. V., & Goltsman, G. N. (2009). Ultrafast superconducting bolometer receivers for terahertz applications. In Proc. PIERS (867). 777 Concord Avenue, Suite 207 Cambridge, MA 02138: The Electromagnetics Academy.
Abstract: The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe.
|
|
|
Zhang, W., Miao, W., Zhong, J. Q., Shi, S. C., Hayton, D. J., Vercruyssen, N., et al. (2013). Temperature dependence of superconducting hot electron bolometers. In Not published results: 24th international symposium on space terahertz technology.
|
|
|
Shurakov, A., Lobanov, Y., & Goltsman, G. (2015). Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications. Supercond. Sci. Technol., 29(2), 023001.
Abstract: The discovery of hot-electron phenomena in a thin superconducting film in the last century was followed by numerous experimental studies of its appearance in different materials aiming for a better understanding of the phenomena and consequent implementation of terahertz detection systems for practical applications. In contrast to the competitors such as superconductor-insulator-superconductor tunnel junctions and Schottky diodes, the hot electron bolometer (HEB) did not demonstrate any frequency limitation of the detection mechanism. The latter, in conjunction with a decent performance, rapidly made the HEB mixer the most attractive candidate for heterodyne observations at frequencies above 1 THz. The successful operation of practical instruments (the Heinrich Hertz Telescope, the Receiver Lab Telescope, APEX, SOFIA, Hershel) ensures the importance of the HEB technology despite the lack of rigorous theoretical routine for predicting the performance. In this review, we provide a summary of experimental and theoretical studies devoted to understanding the HEB physics, and an overview of various fabrication routes and materials.
|
|
|
Gershenzon, E. M., Gershenson, M. E., Goltsman, G. N., Lyulkin, A. M., Semenov, A. D., & Sergeev, A. V. (1989). Limiting characteristics of fast-response superconducting bolometers. Zhurnal Tekhnicheskoi Fiziki, 59(2), 11–120.
Abstract: Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
|
|
|
Elmanov, I., Sardi, F., Xia, K., Kornher, T., Kovalyuk, V., Prokhodtsov, A., et al. (2020). Development of focusing grating couplers for lithium niobate on insulator platform. In J. Phys.: Conf. Ser. (Vol. 1695, 012127).
Abstract: In this paper, we fabricate and experimentally study focusing grating couplers for lithium niobate on an insulator photonic platform. The transmittance of a waveguide equipped with in- and out-couplers with respect to the grating period is measured with and without silicon dioxide cladding applied. Our results show the influence of silicon dioxide cladding on the efficiency and the central wavelength of grating couplers and can be used to improve grating coupling efficiency. Our study is supported by numerical simulations.
|
|
|
Prokhodtsov, A., Golikov, A., An, P., Kovalyuk, V., Goltsman, G., Arakelyan, S., et al. (2019). Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency. In EPJ Web Conf. (Vol. 220, 02009).
Abstract: The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform.
|
|
|
Fedorov, G., Gayduchenko, I., Titova, N., Moskotin, M., Obraztsova, E., Rybin, M., et al. (2018). Graphene-based lateral Schottky diodes for detecting terahertz radiation. In F. Berghmans, & A. G. Mignani (Eds.), Proc. Optical Sensing and Detection V (Vol. 10680, pp. 30–39). Spie.
Abstract: Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
|
|
|
Gayduchenko, I. A., Moskotin, M. V., Matyushkin, Y. E., Rybin, M. G., Obraztsova, E. D., Ryzhii, V. I., et al. (2018). The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts. In Materials Today: Proc. (Vol. 5, pp. 27301–27306).
Abstract: We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface.
|
|
|
Fedorov, G. E., Gaiduchenko, I. A., Golikov, A. D., Rybin, M. G., Obraztsova, E. D., Voronov, B. M., et al. (2015). Response of graphene based gated nanodevices exposed to THz radiation. In EPJ Web of Conferences (Vol. 103, 10003 (1 to 2)).
Abstract: In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
|
|
|
Bandurin, D. A., Gayduchenko, I., Cao, Y., Moskotin, M., Principi, A., Grigorieva, I. V., et al. (2018). Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors. Appl. Phys. Lett., 112(14), 141101 (1 to 5).
Abstract: Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.
D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions.
|
|
|
Voevodin, E. I., Gershenzon, E. M., Goltsman, G. N., Ptitsina, N. G., & Chulkova, G. M. (1988). Capture of free holes by charged acceptors in uniaxially deformed Ge. Fizika i Tekhnika Poluprovodnikov, 22(3), 540–543.
Abstract: Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии.
|
|
|
Gershenzon, E. M., Goltsman, G. N., Multanovskii, V. V., & Ptitsina, N. G. (1982). Kinetics of submillimeter impurity and exciton photoconduction in Ge. Optics and Spectroscopy, 52(4), 454–455.
|
|
|
Gershenzon, E., Goltsman, G., Orlov, L., & Ptitsina, N. (1978). Population of excited-states of small admixtures in germanium. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 42, pp. 1154–1159). Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia.
|
|
|
Gershenzon, E. M., & Goltsman, G. N. (1972). Zeeman effect in excited-states of donors in germanium. Sov. Phys. Semicond., 6(3), 509.
|
|