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Manus, M. K. Mc; Kash, J. A.; Steen, S. E.; Polonsky, S.; Tsang, J.C.; Knebel, D. R.; Huott, W. |
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PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis |
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2000 |
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Microelectronics Reliability |
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Microelectronics Reliability |
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40 |
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1353-1358 |
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SSPD, CMOS testing |
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Normal operation of complementary metal-oxide semiconductor (CMOS) devices entails the emission of picosecond pulses of light, which can be used to diagnose circuit problems. The pulses that are observed from submicron sized field effect transistors (FETs) are synchronous with logic state switching. Picosecond Imaging Circuit Analysis (PICA), a new optical imaging technique combining imaging with timing, spatially resolves individual devices at the 0.5 micron level and switching events on a 10 picosecond timescale. PICA is used here for the diagnostics of failures on two VLSI microprocessors. |
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1054 |
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Author |
Stellari, Franco; Song, Peilin |
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Testing of ultra low voltage CMOS microprocessors using the superconducting single-photon detector (SSPD) |
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2005 |
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Proc. 12th IPFA |
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Proc. 12th IPFA |
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2 |
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SSPD, CMOS testing |
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In F. Stellari and P. Song (2004) the authors have shown a comparison among different detectors used for diagnosing integrated circuits (ICs) by means of the PICA method. In their experiments they used two versions of the SSPD detector (p-SSPD is a prototype version, while c-SSPD is the first commercially available generation of the detector as presented in W. K. Lo et al. (2002), as well as the imaging detector (S-25 photo-multiplier tube (PMT) as discussed in W. G. McMullan (1987)) used in the conventional PICA technique. A microprocessor chip fabricated in a 0.13 μm 1.2 V technology is used to show that c-SSPD provides a significant reduction in acquisition time for the collection of optical waveforms from chips running at very low. In this paper, the authors summarize the main results. |
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IEEE |
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0-7803-9301-5 |
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1055 |
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Stevens, M.; Hadfield, R.; Schwall, R.; Nam, S.W.; Mirin, R.; Gupta, J. |
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Fast lifetime measurements of infrared emitters using a low-jitter superconduct- ing single-photon detector |
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2006 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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89 |
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031109 |
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SSPD, jitter, QD, QW |
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RPLAB @ akorneev @ |
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611 |
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Stevens, M.; Hadfeld, R.; Schwall, R.; Nam, S.W.; and Mirin, R. |
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Quantum dot single photon sources studied with superconducting single photon detectors |
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2006 |
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IEEE J. Sel. Topics Quantum Electron. |
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12 |
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6 |
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1255-1267 |
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SSPD, jitter, QD, QW |
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Yang, J. K. W.; Kerman, A. J.; Dauler, E. A.; Anant, V.; Rosfjord, K. M.; Berggren, K. K. |
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Modeling the electrical and thermal response of superconducting nanowire single-photon detectors |
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2007 |
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IEEE Trans. Appl. Supercond. |
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17 |
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2 |
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581 - 585 |
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SSPD, modeling |
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We modeled the response of superconducting nanowire single-photon detectors during a photodetection event, taking into consideration only the thermal and electrical properties of a superconducting NbN nanowire on a sapphire substrate. Our calculations suggest that heating which occurs after the formation of a photo-induced resistive barrier is responsible for the generation of a measurable voltage pulse. We compared this numerical result with experimental data of a voltage pulse from a slow device, i.e. large kinetic inductance, and obtained a good fit. Using this electro-thermal model, we estimated the temperature rise and the resistance buildup in the nanowire, and the return current at which the nanowire becomes superconducting again. We also show that the reset time of these photodetectors can be decreased by the addition of a series resistance and provide supporting experimental data. Finally we present preliminary results on a detector latching behavior that can also be explained using the electro-thermal model. |
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