| Author |
Title |
Year |
Publication |
Volume |
Pages |
| Ryabchun, S.; Tong, C.-yu E.; Blundell, R.; Kimberk, R.; Gol’tsman, G. |
Effect of microwave radiation on the stability of terahertz hot-electron bolometer mixers |
2006 |
Proc. SPIE |
6373 |
63730J (1 to 5) |
| Semenov, A.; Richter, H.; Smirnov, A.; Günther, B.; Hübers, H.-W.; Il’in, K.; Siegel, M.; Gol’tsman, G.; Drakinskiy, V.; Merkel, H.; Karamarkovic, J. |
Development of HEB mixers for GREAT and for security screening |
2007 |
Proc. 18th Int. Symp. Space Terahertz Technol. |
|
184 |
| Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. |
Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency |
2017 |
Proc. 28th Int. Symp. Space Terahertz Technol. |
|
147-148 |
| Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
1996 |
Proc. 7th Int. Symp. Space Terahertz Technol. |
|
290-302 |
| Cherednichenko, S.; Yagoubov, P.; Il'In, K.; Gol'tsman, G.; Gershenzon, E. |
Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates |
1997 |
Proc. 8th Int. Symp. Space Terahertz Technol. |
|
245-257 |
