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Seleznev, V. A.; Tarkhov, M. A.; Voronov, B. M.; Milostnaya, I. I.; Lyakhno, V. Yu; Garbuz, A. S.; Mikhailov, M. Yu; Zhigalina, O. M.; Gol'tsman, G. N. |
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Deposition and characterization of few-nanometers-thick superconducting Mo-Re films |
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2008 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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21 |
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11 |
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115006 (1 to 6) |
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We report on the fabrication and investigation of few-nanometers-thick superconducting molybdenum-rhenium (Mo-Re) films intended for use in nanowire single-photon superconducting detectors (SSPDs). Mo-Re films were deposited on sapphire substrates by DC magnetron sputtering of an Mo(60)-Re(40) alloy target in an atmosphere of argon. The films 2-10 nm thick had critical temperatures (Tc) from 5.6 to 9.7 K. HRTEM (high-resolution transmission electron microscopy) analysis showed that the films had a homogeneous structure. XPS (x-ray photoelectron spectroscopy) analysis showed the Mo to Re atom ratio to be 0.575/0.425, oxygen concentration to be 10%, and concentration of other elements to be 1%. |
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723 |
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Gol'tsman, B. M.; Kutasov, V. A.; Luk'yanova, L. N. |
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Mechanism of formation of texture and its influence on the strength of thermoelectric p-Bi0.5Sb1.5Te3 |
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2009 |
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Physics of the Solid State |
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Phys. Sol. St. |
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51 |
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4 |
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747-749 |
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It is established that, in preparing p-Bi0.5Sb1.5Te3 by vertical zone melting, in addition to the directional texture (characteristic of materials exhibiting a highly anisotropic growth rate) in which the cleavage planes of crystal grains are parallel to the direction of propagation of the crystallization front, other texture types can arise, in which the orientation of grain cleavage planes is ordered in a cross-sectional plane of the ingot. Two types of such textures, “radial†and “circular,†were observed. In a radial texture, the lines of intersection of grain cleavage planes with a cross-sectional plane of the ingot are oriented along radii of this cross section and, in a circular texture, these lines of intersection are oriented approximately perpendicular to a radius crossing the grain. The formation of a radial texture is associated with rotation of the ampoule with the crystallizing substance about its vertical axis causing centrifugal flows of the melt. The formation of a circular texture is associated with the orientation effect of the ampoule walls and with circular motion of the melt during torsional oscillations of the ampoule about the vertical axis. Ingots with a radial texture exhibit much lower resistance to splitting along their axis than ingots with a circular texture do. An explanation is provided for this fact. |
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726 |
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Usadel, Klaus D. |
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Generalized diffusion equation for superconducting alloys |
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1970 |
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Phys. Rev. Lett. |
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Phys. Rev. Lett. |
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25 |
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8 |
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507 |
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Eilenberger's transportlike equations for a superconductor of type II can be simplified very much in the dirty limit. In this limit a diffusionlike equation is derived which is the generalization of the de Gennes-Maki theory for dirty superconductors to arbitrary values of the order parameter. |
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Schmid, Albert; Schön, Gerd |
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Linearized kinetic equations and relaxation processes of a superconductor near Tc |
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1975 |
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J. Low Temp. Phys. |
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J. Low Temp. Phys. |
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20 |
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1-2 |
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207-227 |
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Starting from the equation of Gor'kov and Eliashberg in a form introduced by Eilenberger, we derive a set of linearized equations for the deviation from the equilibrium value of the quasiparticle distribution function as well as of the order parameter. These equations resemble the Boltzmann equation and the Ginzburg-Landau equation, respectively, and they form a set of coupled equations. Two different modes can be distinguished, depending on whether the order parameter changes in magnitude or in phase. The equations are solved for the case of a stationary quasiparticle injection into a superconductor and the change in the electrochemical potential of the quasiparticles is calculated. Furthermore, we treat the problem of a current flowing perpendicular to a superconducting-normal interface in which a normal current is converted into a supercurrent, and we calculate the extra resistance of the interface. |
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922 |
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Swetz, D. S.; Bennett, D. A.; Irwin, K. D.; Schmidt, D. R.; Ullom, J. N. |
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Current distribution and transition width in superconducting transition-edge sensors |
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2012 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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101 |
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242603 |
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Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition. |
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TES, current distribution |
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Recommended by Klapwijk |
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930 |
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