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Author Title Year Publication Volume Pages
Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M. Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it 1978 Izv. Akad. Nauk SSSR, Seriya Fizicheskaya 42 1142-1148
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. Investigation of excited donor states in GaAs 1974 Sov. Phys. Semicond. 7 1248-1250
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. Germanium hot-electron narrow-band detector 1971 Sov. Radio Engineering And Electronic Physics 16 1346
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure 1989 Sov. Phys. and Technics of Semiconductors 23 843-846
Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons 1975 Sov. Phys. JETP 40 311-315
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions 1976 Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников 10 1379-1383
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields 1972 Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников 6 362-363
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. Investigation of population and ionization of donor excited states in Ge 1976 Physics of Semiconductors 631-634
Gershenzon, E. M.; Gol'tsman, G. N. Transitions of electrons between excited states of donors in germanium 1971 JETP Lett. 14 63-65
Gershenzon, E. M.; Goltsman, G. N. Zeeman effect in excited-states of donors in germanium 1972 Sov. Phys. Semicond. 6 509