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Author Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E.
Title Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate Type Journal Article
Year 1997 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 56 Issue 16 Pages 10089-10096
Keywords (down) disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity
Abstract The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1766
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Author Sergeev, A.; Mitin, V.
Title Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials Type Journal Article
Year 2000 Publication Phys. Rev. B. Abbreviated Journal Phys. Rev. B.
Volume 61 Issue 9 Pages 6041-6047
Keywords (down) disordered conductors, scattering potential, electron-phonon interaction
Abstract Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 307
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Author Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M.
Title Electron–phonon interaction in disordered conductors Type Journal Article
Year 1999 Publication Phys. Rev. B Condens. Matter Abbreviated Journal Phys. Rev. B Condens. Matter
Volume 263-264 Issue Pages 190-192
Keywords (down) disordered conductors, electron-phonon interaction
Abstract The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1765
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Author Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E.
Title Relaxation of the resistive superconducting state in boron-doped diamond films Type Journal Article
Year 2016 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 93 Issue 6 Pages 064506
Keywords (down) boron-doped diamond films, resistive superconducting state, relaxation time
Abstract We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9950 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1167
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Author Vercruyssen, N.; Verhagen, T. G. A.; Flokstra, M. G.; Pekola, J. P.; Klapwijk, T. M.
Title Evanescent states and nonequilibrium in driven superconducting nanowires Type Journal Article
Year 2012 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 85 Issue Pages 224503(1-10)
Keywords (down) Al HEB, Al superconducting nanowire, global state, bimodal state, quasiclassical kinetic equations, Usadel equation
Abstract We study the nonlinear response of current transport in a superconducting diffusive nanowire between normal reservoirs. We demonstrate theoretically and experimentally the existence of two different superconducting states appearing when the wire is driven out of equilibrium by an applied bias, called the global and bimodal superconducting states. The different states are identified by using two-probe measurements of the wire, and measurements of the local density of states with tunneling probes. The analysis is performed within the framework of the quasiclassical kinetic equations for diffusive superconductors.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 898
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