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Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Title |
Development of a silicon membrane-based multipixel hot electron bolometer receiver |
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Journal Article |
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Year |
2017 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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27 |
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4 |
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1-5 |
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Multi-pixel, NbN HEB, silicon-on-insulator, horn array |
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We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. |
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1051-8223 |
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1324 |
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Arutyunov, K. Y.; Ramos-Álvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol’tsman, G. N. |
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Title |
Quasi-1-dimensional superconductivity in highly disordered NbN nanowires |
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Miscellaneous |
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2016 |
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arXiv |
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narrow NbN nanowires, BCS |
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The topic of superconductivity in strongly disordered materials has attracted a significant attention. In particular vivid debates are related to the subject of intrinsic spatial inhomogeneity responsible for non-BCS relation between the superconducting gap and the pairing potential. Here we report experimental study of electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. We find that conventional models based on phase slip concept provide reasonable fits for the shape of the R(T) transition curve. Temperature dependence of the critical current follows the text-book Ginzburg-Landau prediction for quasi-one-dimensional superconducting channel Ic~(1-T/Tc)^3/2. Hence, one may conclude that the intrinsic electronic inhomogeneity either does not exist in our structures, or, if exist, does not affect their resistive state properties. |
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Duplicated as 1332 |
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1338 |
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Il'in, K.; Siegel, M.; Semenov, A.; Engel, A.; Hübers, H.-W.; Hollmann, E.; Gol'tsman, G.; Voronov, B. |
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Title |
Thickness dependence of superconducting properties of ultrathin Nb and NbN films |
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2004 |
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AKF-Frühjahrstagung |
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Nb, NbN films, has potential plagiarism |
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Berlin-Adlershof |
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1503 |
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Korneeva, Y.; Sidorova, M.; Semenov, A.; Krasnosvobodtsev, S.; Mitsen, K.; Korneev, A.; Chulkova, G.; Goltsman, G. |
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Title |
Comparison of hot-spot formation in NbC and NbN single-photon detectors |
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Journal Article |
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2016 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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26 |
Issue |
3 |
Pages |
1-4 |
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NbC, NbN SSPD, SNSPD |
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We report an experimental investigation of the hot-spot evolution in superconducting single-photon detectors made of disordered superconducting materials with different diffusivity and energy downconversion time values, i.e., 33-nm-thick NbN and 23-nm-thick NbC films. We have demonstrated that, in NbC film, only 405-nm photons produce sufficiently large hot spot to trigger a single-photon response. The dependence of detection efficiency on bias current for 405-nm photons in NbC is similar to that for 3400-nm photons in NbN. In NbC, large diffusivity and downconversion time result in 1-D critical current suppression profile compared with the usual 2-D profile in NbN. |
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1051-8223 |
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1348 |
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Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S. |
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Universal bottleneck for thermal relaxation in disordered metallic films |
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2020 |
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JETP Lett. |
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Jetp Lett. |
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111 |
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2 |
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104-108 |
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NbN disordered metallic films, thermal relaxation |
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We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors. |
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0021-3640 |
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1164 |
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Beck, Matthias; Leiderer, Paul; Kabanov, Viktor V.; Gol'tsman, Gregory; Helm, Manfred; Demsar, Jure |
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Energy-gap dynamics of a superconductor NbN studied by time-resolved terahertz spectroscopy |
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2012 |
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INIS |
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INIS |
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45 |
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12 |
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1-3 |
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NbN energy gap |
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Using time-resolved terahertz (THz) spectroscopy we performed direct studies of the photoinduced suppression and recovery of the SC gap in a conventional SC NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the important microscopic constants: the Cooper pair-breaking rate via phonon absorption and the bare quasiparticle recombination rate. From the latter we were able to extract the dimensionless electron-phonon coupling constant, λ=1.1±0.1, in excellent agreement with theoretical estimates. The technique also allowed us to determine the absorbed energy required to suppress SC, which in NbN equals the thermodynamic condensation energy (in cuprates the two differ by an order of magnitude). Finally, we present the first studies of dynamics following resonant excitation with intense narrow band THz pulses tuned to above and below the superconducting gap. These suggest an additional process, particularly pronounced near Tc, that could be attributed to amplification of SC via effective quasiparticle cooling. |
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1383 |
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Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. |
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Title |
Superconductive properties of ultrathin NbN films on different substrates |
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Journal Article |
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1994 |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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7 |
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6 |
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1097-1102 |
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NbN films |
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A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz. |
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Russian |
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0131-5366 |
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Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках |
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1631 |
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Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. |
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Electron-phonon interaction in disordered NbN films |
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Journal Article |
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1994 |
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Phys. B Condens. Mat. |
Abbreviated Journal |
Phys. B Condens. Mat. |
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194-196 |
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1355-1356 |
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NbN films |
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Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films. |
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0921-4526 |
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1649 |
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Budyanskij, M. Ya.; Sejdman, L. A.; Voronov, B. M.; Gubkina, T. O. |
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Increase of reproducibility in production of superconducting thin films of niobium nitride |
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Journal Article |
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1992 |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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5 |
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10 |
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1950-1954 |
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NbN films |
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Technique to control the composition of gas medium in the reactive magnetron discharge and the composition of the deposited films of niobium nitride using electrical parameters of discharge only, in particular, by δU = Up – Uar value at contant stabilized discharge current is described. Technique to select optimal condition for deposition of niobium nitride films when the films have composition meeting chemical formula, is suggested. Thin films of niobium nitride with up to 7 nm thickness and with rather high temperature of transition into superconducting state Tk > 10 K) and with low width of transition (δ < 0.6 K), are obtained. It is determined, that substrate material and dielectric sublayer do not affect. Tk value, while difference in coefficients of thermal expansion of substrate and of film affects δTk value. |
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1675 |
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Корнеев, А. А.; Окунев, О. В.; Чулкова, Г. М.; Смирнов, К. В.; Милостная, И. И.; Минаева, О. В.; Корнеева, Ю. П.; Каурова, Н. С.; Воронов, Б. М.; Гольцман, Г. Н. |
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Спонтанные и фотоиндуцированные резистивные состояния в узких сверхпроводящих NbN полосках |
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2015 |
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NbN films |
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Монография посвящена актуальной проблеме современной фотоники: разработке высокочувствительных и быстродействующих сверхпроводниковых однофотонных детекторов на основе тонкой пленки NbN. В работе исследуются неравновесные процессы, протекающие в тонкой сверхпроводящей пленке после поглощения инфракрасного фотона и приводящие к возникновению резистивного состояния. На этих процессах основан механизм фотоотклика исследуемого в работе однофотонного детектора. В частности, исследуются зависимости квантовой эффективности и скорости темнового счета от геометрических параметров детектора: толщины пленки, ширины полоски, а также от величины транспортного тока детектора. Монография предназначена для студентов старших курсов, аспирантов и начинающих исследователей, работающих в области сверхпроводниковой наноэлектроники и радиофизики. |
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Москва |
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МПГУ |
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УДК: 535; Число страниц: 108 |
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