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Delacour, C., Claudon, J., Poizat, J. - P., Pannetier, B., Bouchiat, V., de Lamaestre, R. E., et al. (2007). Superconducting single photon detectors made by local oxidation with an atomic force microscope. Appl. Phys. Lett., 90(19), 191116 (1 t0 3).
Abstract: The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K.
The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433.
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Terai, H., Miki, S., Yamashita, T., Makise, K., & Wang, Z. (2010). Demonstration of single-flux-quantum readout operation for superconducting single-photon detectors. Appl. Phys. Lett., 97(11), 3.
Abstract: A readout circuit using superconducting single-flux-quantum (SFQ) circuits has been developed to realize an independently addressable array of superconducting single-photon detectors (SSPDs). We tested the SFQ readout circuits by connecting with SSPDs. The error rates of readout circuits were below 10–5 for input signal amplitude of greater than 18.2 μA. Detection efficiencies (DEs) for single-photon incidents were measured both with and without the connection of a readout circuit. The observed DEs traced almost the same curves regardless of the connection of the readout circuit, except that the SSPD is likely to latch by connecting the readout circuit.
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Gaggero, A., Nejad, S. J., Marsili, F., Mattioli, F., Leoni, R., Bitauld, D., et al. (2010). Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl. Phys. Lett., 97(15), 3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Baek, B., Lita, A. E., Verma, V., & Nam, S. W. (2011). Superconducting a-WxSi1–x nanowire single-photon detector with saturated internal quantum efficiency from visible to 1850 nm. Appl. Phys. Lett., 98(25), 3.
Abstract: We have developed a single-photon detector based on superconducting amorphous tungsten–silicon alloy (a-WxSi1–x) nanowire. Our device made from a uniform a-WxSi1–x nanowire covers a practical detection area (16 μm×16 μm) and shows high sensitivity featuring a plateau of the internal quantum efficiencies, i.e., efficiencies of generating an electrical pulse per absorbed photon, over a broad wavelength and bias range. This material system for superconducting nanowire detector technology could overcome the limitations of the prevalent nanowire devices based on NbN and lead to more practical, ideal single-photon detectors having high efficiency, low noise, and high count rates.
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Tanner, M. G., Natarajan, C. M., Pottapenjara, V. K., O'Connor, J. A., Warburton, R. J., Hadfield, R. H., et al. (2010). Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon. Appl. Phys. Lett., 96(22), 3.
Abstract: Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
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Marsili, F., Najafi, F., Herder, C., & Berggren, K. K. (2011). Electrothermal simulation of superconducting nanowire avalanche photodetectors. Appl. Phys. Lett., 98(9), 3.
Abstract: We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.
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Zwiller, V., Aichele, T., Seifert, W., Persson, J., & Benson, O. (2003). Generating visible single photons on demand with single InP quantum dots. Appl. Phys. Lett., 82(10), 1509–1511.
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Rasulova, G. K., Brunkov, P. N., Pentin, I. V., Egorov, A. Y., Knyazev, D. A., Andrianov, A. V., et al. (2012). A weakly coupled semiconductor superlattice as a potential for a radio frequency modulated terahertz light emitter. Appl. Phys. Lett., 100(13), 131104 (1 to 4).
Abstract: The bolometer response to THz radiation from a weakly coupled GaAs/AlGaAs superlattice biased in the self-oscillations regime has been observed. The bolometer signal is modulated with the frequency equal to the fundamental frequency of superlattice self-oscillations. The frequency spectrum of the bolometer signal contains higher harmonics whose frequency is a multiple of fundamental frequency of self-oscillations.
This work was supported by State Contracts Nos. 16.740.11.0044 and 16.552.11.7002 of Ministry of Education and Science of the Russian Federation. Structural characterization was made on the equipment of the Joint Research Centre «Material science and characterization in advanced technology» (Ioffe Institute, St. Petersburg, Russia).
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Fetterman, H. R., Tannenwald, P. E., Clifton, B. J., Parker, C. D., Fitzgerald, W. D., & Erickson, N. R. (1978). Far-ir heterodyne radiometric measurements with quasioptical Schottky diode mixers. Appl. Phys. Lett., 33(2), 151–154.
Abstract: Frequency countings close to a phase locked zone in an electronic receiver show a 1/f power spectral density. The noise scaling versus the frequency deviation and the open loop gain are found from Adler's model of the phase locked loop. This fully agrees with experiments performed at 5 MHz on a receiver with a Schottky diode mixer and a low pass filter. The 1/f amplitude and frequency noise due to the whole set of (sub)harmonics is explained from a nonlinear mapping, with a coupling coefficient related to the structure of prime numbers.
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Walther, C., Scalari, G., Faist, J., Beere, H., & Ritchie, D. (2006). Low frequency terahertz quantum cascade laser operating from 1.6 to 1.8 THz. Appl. Phys. Lett., 89, 231121(1–3).
Abstract: The authors report a GaAs/Al0.1Ga0.9As quantum cascade laser based on a bound-to-continuum transition optimized for low frequency operation. High tunability of the gain curve is achieved by the Stark effect and laser emission is measured between 1.6 and 1.8 THz. Pulsed mode operation up to 95 K and continuous wave operation up to 80 K are reported. The dynamical range in current is as high as 43%.
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