|
|
An, P., Kovalyuk, V., Golikov, A., Zubkova, E., Ferrari, S., Korneev, A., et al. (2018). Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing. In J. Phys.: Conf. Ser. (Vol. 1124, 051047).
Abstract: In this paper we experimentally studied the influence of geometrical parameters of the planar O-ring resonators on its Q-factor and losses. We systematically changed the gap between the bus waveguide and the ring, as well as the width of the ring. We found the highest Q = 5×105 for gap 2.0 μm and the ring width 2 μm. This work is important for further on-chip SFWM applications since the generation rate of the biphoton field strongly depends on the quality factor as Q3
|
|
|
|
Chuprina, I. N., An, P. P., Zubkova, E. G., Kovalyuk, V. V., Kalachev, A. A., & Gol'tsman, G. N. (2017). Optimisation of spontaneous four-wave mixing in a ring microcavity. In J. Phys.: Conf. Ser. (Vol. 47, pp. 887–891).
Abstract: Abstract. A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the disper- sion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numeri- cal calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: com- pletely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable.
|
|
|
|
Zubkova, E., An, P., Kovalyuk, V., Korneev, A., Ferrari, S., Pernice, W., et al. (2017). Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform. In J. Phys.: Conf. Ser. (Vol. 917, 062042).
Abstract: We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. These waveguides would serve as efficient notch-filters with the desired characteristics. Transmission spectra of the fabricated integrated notch filters have been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. Performance of the filters has been studied depending on different parameters, such as pitch, filling factor, and height of teeth of the Bragg grating
|
|
|
|
Elmanova, A., An, P., Kovalyuk, V., Golikov, A., Elmanov, I., & Goltsman, G. (2020). Study of silicon nitride O-ring resonator for gas-sensing applications. In J. Phys.: Conf. Ser. (Vol. 1695, 012124).
Abstract: In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.
|
|
|
|
Komrakova, S., Kovalyuk, V., An, P., Golikov, A., Rybin, M., Obraztsova, E., et al. (2020). Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit. In J. Phys.: Conf. Ser. (Vol. 1695, 012135).
Abstract: In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide.
|
|
|
|
Griffin, M. J., Abergel, A., Abreu, A., Ade, P. A. R., André, P., Augueres, J. - L., et al. (2010). The Herschel-SPIRE instrument and its in-flight performance. A&A, 518, 7.
Abstract: The Spectral and Photometric Imaging REceiver (SPIRE), is the Herschel Space Observatory`s submillimetre camera and spectrometer. It contains a three-band imaging photometer operating at 250, 350 and 500 μm, and an imaging Fourier-transform spectrometer (FTS) which covers simultaneously its whole operating range of 194-671 μm (447-1550 GHz). The SPIRE detectors are arrays of feedhorn-coupled bolometers cooled to 0.3 K. The photometer has a field of view of 4Â´× 8´, observed simultaneously in the three spectral bands. Its main operating mode is scan-mapping, whereby the field of view is scanned across the sky to achieve full spatial sampling and to cover large areas if desired. The spectrometer has an approximately circular field of view with a diameter of 2.6´. The spectral resolution can be adjusted between 1.2 and 25 GHz by changing the stroke length of the FTS scan mirror. Its main operating mode involves a fixed telescope pointing with multiple scans of the FTS mirror to acquire spectral data. For extended source measurements, multiple position offsets are implemented by means of an internal beam steering mirror to achieve the desired spatial sampling and by rastering of the telescope pointing to map areas larger than the field of view. The SPIRE instrument consists of a cold focal plane unit located inside the Herschel cryostat and warm electronics units, located on the spacecraft Service Module, for instrument control and data handling. Science data are transmitted to Earth with no on-board data compression, and processed by automatic pipelines to produce calibrated science products. The in-flight performance of the instrument matches or exceeds predictions based on pre-launch testing and modelling: the photometer sensitivity is comparable to or slightly better than estimated pre-launch, and the spectrometer sensitivity is also better by a factor of 1.5-2.
|
|
|
|
Elezov, M. S., Semenov, A. V., An, P. P., Tarkhov, M. A., Goltsman, G. N., Kardakova, A. I., et al. (2013). Investigating the detection regimes of a superconducting single-photon detector. J. Opt. Technol., 80(7), 435.
Abstract: The detection regimes of a superconducting single-photon detector have been investigated. A technique is proposed for determining the regions in which “pure regimes” predominate. Based on experimental data, the dependences of the internal quantum efficiency on the bias current are determined in the one-, two-, and three-photon detection regimes.
|
|
|
|
Korneev, A., Kovalyuk, V., Ferrari, S., Kahl, O., Pernice, W., An, P., et al. (2017). Superconducting Single-Photon Detectors for Integrated Nanophotonics Circuits. In 16th ISEC (pp. 1–3).
Abstract: We present an overview of our recent achievements in integration of superconducting nanowire single-photon detectors SNSPD with dielectric optical waveguides. We are able to produce complex nanophotonics integrated circuits containing optical elements and photon detector on single chip thus producing a compact integrated platform for quantum optics applications.
|
|
|
|
Korneev, A., Kovalyuk, V., An, P., Golikov, A., Zubkova, E., Ferrari, S., et al. (2018). Superconducting single-photon detector for integrated waveguide spectrometer. In EPJ Web Conf. (Vol. 190, 04009).
Abstract: We present our recent achievements in the development of an on-chip spectrometer consisting of arrayed waveguide grating made of Si3N4 waveguides and NbN superconducting single-photon detector.
|
|
|
|
Kardakova, A. I., Coumou, P. C. J. J., Finkel, M. I., Morozov, D. V., An, P. P., Goltsman, G. N., et al. (2015). Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films. IEEE Trans. Appl. Supercond., 25(3), 1–4.
Abstract: We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.
|
|
