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Sergeev, A.; Mitin, V. |
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Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials |
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Journal Article |
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2000 |
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Phys. Rev. B. |
Abbreviated Journal |
Phys. Rev. B. |
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61 |
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9 |
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6041-6047 |
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disordered conductors, scattering potential, electron-phonon interaction |
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Abstract |
Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film. |
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0163-1829 |
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307 |
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Author |
Saslaw, William C. |
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The distribution of the galaxies. Gravitational clustering in cosmology |
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Book Whole |
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2000 |
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Press syndicate of the University of Cambridge |
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astronomy |
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495 |
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Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
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Journal Article |
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2000 |
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JETP Lett. |
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JETP Lett. |
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71 |
Issue |
1 |
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31-34 |
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2DEG, GaAs/AlGaAs heterostructures |
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The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. |
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0021-3640 |
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http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) |
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1559 |
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Смирнов, Константин Владимирович |
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Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе |
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2000 |
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М. МПГУ |
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2DEG, AlGaAs/GaAs heterostructures, NbN films |
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Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств. |
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Москва, МПГУ |
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Ph.D. thesis |
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1830 |
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Kawamura, Jonathan; Blundell, Raymond; Tong, C.-Y. Edward; Papa, D. Cosmo; Hunter, Todd R.; Paine, Scot.t. N.; Patt, Ferdinand; Gol'tsman, Gregory; Cherednichenko, Sergei; Voronov, Boris; Gershenzon, Eugene |
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Superconductive hot-electron bolometer mixer receiver for 800 GHz operation |
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Miscellaneous |
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Year |
2000 |
Publication |
IEEE Trans. Microwave Theory and Techniques |
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IEEE Trans. Microwave Theory and Techniques |
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Volume |
48 |
Issue |
4 |
Pages |
683-689 |
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RPLAB @ s @ Kawamura_superconductivehot-electron |
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424 |
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