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Author Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P.
Title Noise equivalent temperature difference of a superconducting integrated terahertz receiver Type Journal Article
Year 2009 Publication J. Commun. Technol. Electron. Abbreviated Journal J. Commun. Technol. Electron.
Volume 54 Issue 6 Pages 716-720
Keywords (down) SIS mixer SIR NETD, FFO, harmonic mixer
Abstract The dependence of the noise equivalent temperature difference (NETD) of a superconducting integrated receiver (SIR) on the receiver noise temperature and the inputsignal level has been investigated. An unprecedented NETD of 13±2 mK has been measured at a SIR noise temperature of 200 K, intermediate-frequency bandwidth of 4 GHz, and time constant of 1 s. With a decrease in the input signal, an improvement in the NETD is observed. This effect is explained by a reduction in the influence of the instabilities of the receiver power supply and the amplification circuit that occur when the input signal is decreased.
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Language Summary Language Original Title
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Series Volume Series Issue Edition
ISSN 1064-2269 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1400
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Author Koshelets, V. P.; Ermakov, A. B.; Filippenko, L. V.; Koryukin, O. V.; Khudchenko, A. V.; Sobolev, A. S.; Torgashin, M. Yu.; Yagoubov, P. A.; Hoogeveen, R. W. M.; Vreeling, W. J.; Wild, W.; Pylypenko, O. M.
Title Superconducting submm integrated receiver for TELIS Type Conference Article
Year 2006 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 43 Issue Pages 1377-1380
Keywords (down) SIR
Abstract
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 514
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Author Yagoubov, P.; Hoogeveen, R.; Torgashin, M.; Khudchenko, A.; Koshelets, V.; Suttiwong, N.; Wagner, G.; Birk M.
Title 550-650 GHz spectrometer development for TELIS Type Conference Article
Year 2006 Publication Proc. 17th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 338-341
Keywords (down) SIR
Abstract
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Publisher Place of Publication Editor
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Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 528
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Author Kovalyuk, V.; Kahl, O.; Ferrari, S.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W.
Title On-chip single-photon spectrometer for visible and infrared wavelength range Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051045
Keywords (down) single-photon spectrometer
Abstract Here we show our latest progress in the field of a single-photon spectrometer for the visible and infrared wavelengths ranges implementation. We consider three different on-chip approaches: a coherent spectrometer with a low power of the heterodyne, a coherent spectrometer with a high power of the heterodyne, and an eight-channel single-photon spectrometer for direct detection. Along with high efficiency, spectrometers show high detection efficiency and temporal resolution through the use of waveguide integrated superconducting nanowire single-photon detectors.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1197
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Author Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory
Title Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors Type Abstract
Year 2020 Publication Graphene and 2dm Virt. Conf. Abbreviated Journal Graphene and 2DM Virt. Conf.
Volume Issue Pages
Keywords (down) single layer graphene, SLG, CVD, plasmons, FET
Abstract Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464.
Address Grenoble, France
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Graphene and 2dm Virtual Conference & Expo
Notes Approved no
Call Number Serial 1743
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