Goltsman, G. N. (2009). Ultrafast nanowire superconducting single-photon detector with photon number resolving capability. In Y. Arakawa, M. Sasaki, & H. Sotobayashi (Eds.), Proc. SPIE (Vol. 7236, 72360D (1 to 11)). SPIE.
Abstract: In this paper we present a review of the state-of-the-art superconducting single-photon detector (SSPD), its characterization and applications. We also present here the next step in the development of SSPD, i.e. photon-number resolving SSPD which simultaneously features GHz counting rate. We have demonstrated resolution up to 4 photons with quantum efficiency of 2.5% and 300 ps response pulse duration providing very short dead time.
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Marsili, F., Bitauld, D., Divochiy, A., Gaggero, A., Leoni, R., Mattioli, F., et al. (2008). Superconducting nanowire photon number resolving detector at telecom wavelength. In CLEO/QELS (Qmj1 (1 to 2)). Optical Society of America.
Abstract: We demonstrate a photon-number-resolving (PNR) detector, based on parallel superconducting nanowires, capable of resolving up to 5 photons in the telecommunication wavelength range, with sensitivity and speed far exceeding existing approaches.
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Kahl, O., Ferrari, S., Kovalyuk, V., Vetter, A., Lewes-Malandrakis, G., Nebel, C., et al. (2017). Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits: supplementary material. Osa.
Abstract: This document provides supplementary information to “Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits", DOI:10.1364/optica.4.000557. Here we detail the on-chip spectrometer design, its characterization and the experimental setup we used. In addition, we present a detailed report concerning the characterization of the superconducting nanowire single photon detectors. In the final sections, we describe sample preparation and characterization of the nanodiamonds containing silicon vacancy color centers.
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Mitin, V., Antipov, A., Sergeev, A., Vagidov, N., Eason, D., & Strasser, G. (2011). Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers. Nanoscale res lett, 6(1), 6.
Abstract: Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV.
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Gol'tsman, G. N., Voronov, B. M., Gershenzon, E. M., et al. (1997). Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 163–166).
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