| Author |
Title |
Year |
Publication |
Volume |
Pages |
| Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Investigation of population and ionization of donor excited states in Ge |
1976 |
Physics of Semiconductors |
|
631-634 |
| Gershenzon, E. M.; Goltsman, G. N. |
Zeeman effect in excited-states of donors in germanium |
1972 |
Sov. Phys. Semicond. |
6 |
509 |
| Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
1982 |
Optics and Spectroscopy |
52 |
454-455 |
| Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
1988 |
Fizika i Tekhnika Poluprovodnikov |
22 |
540-543 |
| Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
Response of graphene based gated nanodevices exposed to THz radiation |
2015 |
EPJ Web of Conferences |
103 |
10003 (1 to 2) |
