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Author Title Year Publication Volume Pages
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. Capture of free holes by charged acceptors in uniaxially deformed Ge 1988 Fizika i Tekhnika Poluprovodnikov 22 540-543
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. Absorption spectra in electron transitions between excited states of impurities in germanium 1975 JETP Lett. 22 95-97
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. Population and lifetime of excited states of shallow impurities in Ge 1979 Sov. Phys. JETP 49 355-362
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium 1986 Sov. Phys. JETP 64 889-897
Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. The excitonic Zeeman effect in uniaxially-strained germanium 1987 Sov. Phys. JETP 65 1233-1241