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Ryabchun, S., Tong, C. -yu E., Blundell, R., Kimberk, R., & Gol’tsman, G. (2006). Effect of microwave radiation on the stability of terahertz hot-electron bolometer mixers. In M. Anwar, A. J. DeMaria, & M. S. Shur (Eds.), Proc. SPIE (Vol. 6373, 63730J (1 to 5)). SPIE.
Abstract: We report our studies of the effect of microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the NbN hot-electron bolometer (HEB) mixer incorporated into a THz heterodyne receiver. It is shown that exposing the HEB mixer to microwave radiation does not result in a significant rise of the receiver noise temperature and degradation of the mixer conversion gain so long as the level of microwave power is small compared to the local oscillator drive. Hence the injection of a small, but controlled amount of microwave radiation enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the stability of HEB mixer receivers.
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Zhang, W., Li, N., Jiang, L., Ren, Y., Yao, Q. - J., Lin, Z. - H., et al. (2008). Dependence of noise temperature of quasi-optical superconducting hot-electron bolometer mixers on bath temperature and optical-axis displacement. In C. Zhang, & X. - C. Zhang (Eds.), Proc. SPIE (Vol. 6840, 684007 (1 to 8)). Spie.
Abstract: It is known that the increase of bath temperature results in the decrease of critical current of superconducting hot-electron bolometer (HEB) mixers owing to the depression of superconductivity, thus leading to the degradation of the mixer’s sensitivity. Here we report our study on the effect of bath temperature on the heterodyne mixing performance of quasi-optical superconducting NbN HEB mixers incorporated with a two-arm log-spiral antenna. The correlation between the bath temperature, critical current, LO power requirement and noise temperature is investigated at 0.5 THz. Furthermore, the heterodyne mixing performance of quasi-optical superconducting NbN HEB mixers is examined while there is an optical-axis displacement between the center of the extended hemispherical silicon lens and the superconducting NbN HEB device, which is placed on the back of the lens. Detailed experimental results and analysis are presented.
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Gol’tsman, G. N., & Gershenzon, E. M. (1993). High speed hot-electron superconducting bolometer. In J. R. Birch, & T. J. Parker (Eds.), Proc. SPIE (Vol. 2104, pp. 181–182). SPIE.
Abstract: Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q.
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Korneev, A., Korneeva, Y., Florya, I., Voronov, B., & Goltsman, G. (2011). Spectral sensitivity of narrow strip NbN superconducting single-photon detector. In J. Fiurásek, & I. Prochazka (Eds.), Proc. SPIE (Vol. 8072, 80720G (1 to 9)). SPIE.
Abstract: Superconducting single-photon detector (SSPD) is patterned from 4-nm-thick NbN film deposited on sapphire substrate as a 100-nm-wide strip. Due to its high detection efficiency, low dark counts, and picosecond timing jitter SSPD has become a competitor to the InGaAs avalanche photodiodes at 1550 nm and longer wavelengths. Although the SSPD is operated at liquid helium temperature its efficient single-mode fibre coupling enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. In our strive to increase the detection efficiency at 1550 nm and longer wavelengths we developed and fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm. To increase the voltage response of the device we utilized cascade switching mechanism: we connected 50-nm-wide and 10-μm-long strips in parallel covering the area of 10 μmx10 μm. Absorption of a photon breaks the superconductivity in a strip leading to the bias current redistribution between other strips followed their cascade switching. As the total current of all the strips about is 1 mA by the order of magnitude the response voltage of such an SSPD is several times higher compared to the traditional meander-shaped SSPDs. In middle infrared (about 3 μm wavelength) these devices have the detection efficiency several times higher compared to the traditional SSPDs.
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Goltsman, G., Korneev, A., Minaeva, O., Rubtsova, I., Chulkova, G., Milostnaya, I., et al. (2005). Advanced nanostructured optical NbN single-photon detector operated at 2.0 K. In M. Razeghi, & G. J. Brown (Eds.), Proc. SPIE (Vol. 5732, pp. 520–529). Spie.
Abstract: We present our studies on quantum efficiency (QE), dark counts, and noise equivalent power (NEP) of the latest generation of nanostructured NbN superconducting single-photon detectors (SSPDs) operated at 2.0 K. Our SSPDs are based on 4 nm-thick NbN films, patterned by electron beam lithography as highly-uniform 100÷120-nm-wide meander-shaped stripes, covering the total area of 10x10 μm2 with the meander filling factor of 0.7. Advances in the fabrication process and low-temperature operation lead to QE as high as 30-40% for visible-light photons (0.56 μm wavelength)-the saturation value, limited by optical absorption of the NbN film. For 1.55 μm photons, QE was 20% and decreased exponentially with the wavelength reaching 0.02% at the 5-μm wavelength. Being operated at 2.0-K temperature the SSPDs revealed an exponential decrease of the dark count rate, what along with the high QE, resulted in the NEP as low as 5x10-21 W/Hz-1/2, the lowest value ever reported for near-infrared optical detectors. The SSPD counting rate was measured to be above 1 GHz with the pulse-to-pulse jitter below 20 ps. Our nanostructured NbN SSPDs operated at 2.0 K significantly outperform their semiconducting counterparts and find practical applications ranging from noninvasive testing of CMOS VLSI integrated circuits to ultrafast quantum communications and quantum cryptography.
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