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Author Slysz, W.; Wegrzecki, M.; Papis, E.; Gol'tsman, G. N.; Verevkin, A.; Sobolewski, R. url  openurl
  Title A method of optimization of the NbN superconducting single-photon detector Type Miscellaneous
  Year 2004 Publication INIS Abbreviated Journal INIS  
  Volume 36 Issue 27 Pages 1-2  
  Keywords (up) NbN SSPD, SNSPD  
  Abstract  
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  Area Expedition Conference 5-th International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION  
  Notes Reference num. 36060124 Approved no  
  Call Number Serial 1485  
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Author Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gol'tsman, G. N.; Verevkin, M.; Sobolewski, R. url  openurl
  Title NbN superconducting single-photon detectors coupled with a communication fiber Type Miscellaneous
  Year 2004 Publication INIS Abbreviated Journal INIS  
  Volume 37 Issue 2 Pages 1-2  
  Keywords (up) NbN SSPD, SNSPD  
  Abstract  
  Address Stare Jablonki, Poland  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference 8-th Electron Technology Conference ELTE  
  Notes Approved no  
  Call Number Serial 1486  
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Author Rubtsova, I.; Korneev, A.; Matvienko, V.; Chulkova, G.; Milostnaya, I.; Goltsman, G.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R. url  doi
openurl 
  Title Spectral sensitivity, quantum efficiency, and noise equivalent power of NbN superconducting single-photon detectors in the IR range Type Conference Article
  Year 2004 Publication Proc. 29th IRMMW / 12th THz Abbreviated Journal Proc. 29th IRMMW / 12th THz  
  Volume Issue Pages 461-462  
  Keywords (up) NbN SSPD, SNSPD  
  Abstract We have developed nanostructured NbN superconducting single-photon detectors capable of GHz-rate photon counting in the 0.4 to 5 /spl mu/m wavelength range. Quantum efficiency of 30%, dark count rate 3/spl times/10/sup -4/ s/sup -1/, and NEP=10/sup -20/ W/Hz/sup -1/2/ have been measured at the 1.3-/spl mu/m wavelength for the device operating at 2.0 K.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1507  
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Author Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Wilsher, K.; Lo, W.; Okunev, O.; Korneev, A.; Kouminov, P.; Chulkova, G.; Gol’tsman, G. N. url  doi
openurl 
  Title A superconducting single-photon detector for CMOS IC probing Type Conference Article
  Year 2003 Publication Proc. 16-th LEOS Abbreviated Journal Proc. 16-th LEOS  
  Volume 2 Issue Pages 602-603  
  Keywords (up) NbN SSPD, SNSPD  
  Abstract In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA).  
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  Area Expedition Conference The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003.  
  Notes Approved no  
  Call Number Serial 1510  
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Author Sobolewski, R.; Zhang, J.; Slysz, W.; Pearlman, A.; Verevkin, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Goltsman, G. N. url  doi
openurl 
  Title Ultrafast superconducting single-photon optical detectors Type Conference Article
  Year 2003 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 5123 Issue Pages 1-11  
  Keywords (up) NbN SSPD, SNSPD  
  Abstract We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Spigulis, J.; Teteris, J.; Ozolinsh, M.; Lusis, A.  
  Language Summary Language Original Title  
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  ISSN ISBN Medium  
  Area Expedition Conference Advanced Optical Devices, Technologies, and Medical Applications  
  Notes Approved no  
  Call Number Serial 1513  
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Author Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, Roman url  openurl
  Title Ultrafast NBN hot-electron single-photon detectors for electronic applications Type Abstract
  Year 2002 Publication Abstracts 8-th IUMRS-ICEM Abbreviated Journal Abstracts 8-th IUMRS-ICEM  
  Volume Issue Pages  
  Keywords (up) NbN SSPD, SNSPD  
  Abstract We present a new, simple to manufacture, single-photon detector (SPD), which can work from ultraviolet to near-infrared wavelengths of optical radiation and combines high speed of operation, high quantum efficiency (QE), and very low dark counts. The devices are superconducting and operate at temperature below 5 K. The physics of operation of our SPD is based on formation of a photon-induced resistive hotspot and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconductor.  
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  ISSN ISBN Medium  
  Area Expedition Conference 8th IUMRS International Conference on Electronic Materials  
  Notes Approved no  
  Call Number Serial 1532  
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Author Verevkin, A.; Xu, Y.; Zheng, X.; Williams, C.; Sobolewski, Roman; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol’tsman, G. N. url  openurl
  Title Superconducting NbN-based ultrafast hot-electron single-photon detector for infrared range Type Conference Article
  Year 2001 Publication Proc. 12th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 12th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 462-468  
  Keywords (up) NbN SSPD, SNSPD  
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  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1539  
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Author Xu, Y.; Zheng, X.; Williams, C.; Verevkin, A.; Sobolewski, R.; Chulkova, G.; Lipatov, A.; Okunev, O.; Smirnov, K.; Gol’tsman, G. N. url  doi
openurl 
  Title Ultrafast superconducting hot-electron single-photon detector Type Conference Article
  Year 2001 Publication CLEO Abbreviated Journal CLEO  
  Volume Issue Pages 345  
  Keywords (up) NbN SSPD, SNSPD  
  Abstract Summary form only given. The current most-pressing need is to develop a practical, GHz-range counting single-photon detector, operational at either 1.3-/spl mu/m or 1.55-/spl mu/m radiation wavelength, for novel quantum communication and quantum cryptography systems. The presented solution of the problem is to use an ultrafast hot-electron photodetector, based on superconducting thin-film microstructures. This type of device is very promising, due to the macroscopic quantum nature of superconductors. Very fast response time and the small, (meV range) value of the superconducting energy gap characterize the superconductor, leading to the efficient avalanche process even for infrared photons.  
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  Area Expedition Conference Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170)  
  Notes Approved no  
  Call Number Serial 1545  
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Author Zhang, J.; Verevkin, A.; Slysz, W.; Chulkova, G.; Korneev, A.; Lipatov, A.; Okunev, O.; Gol’tsman, G. N.; Sobolewski, Roman url  doi
openurl 
  Title Time-resolved characterization of NbN superconducting single-photon optical detectors Type Conference Article
  Year 2017 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 10313 Issue Pages 103130F (1 to 3)  
  Keywords (up) NbN SSPD, SNSPD  
  Abstract NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Armitage, J. C.  
  Language Summary Language Original Title  
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  Area Expedition Conference Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada  
  Notes Downloaded from http://www2.ece.rochester.edu/projects/ufqp/PDF/2002/213NbNTimeOPTO_b.pdf This artcle was published in 2017 with only first author indicated (Zhang, J.). There were 8 more authors! Approved no  
  Call Number Serial 1750  
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Author Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, Roman; Korneev, A.; Kouminov, P.; Okunev, O.; Chulkova, G.; Gol'tsman, G. url  openurl
  Title Ultimate sensitivity of superconducting single-photon detectors in the visible to infrared range Type Miscellaneous
  Year 2004 Publication ResearchGate Abbreviated Journal ResearchGate  
  Volume Issue Pages  
  Keywords (up) NbN SSPD, SNSPD  
  Abstract We present our quantum efficiency (QE) and noise equivalent power (NEP) measurements of the meandertype ultrathin NbN superconducting single-photon detector in the visible to infrared radiation range. The nanostructured devices with 3.5-nm film thickness demonstrate QE up to~ 10% at 1.3–1.55 µm wavelength, and up to 20% in the entire visible range. The detectors are sensitive to infrared radiation with the wavelengths down to~ 10 µm. NEP of about 2× 10-18 W/Hz1/2 was obtained at 1.3 µm wavelength. Such high sensitivity together with GHz-range counting speed, make NbN photon counters very promising for efficient, ultrafast quantum communications and another applications. We discuss the origin of dark counts in our devices and their ultimate sensitivity in terms of the resistive fluctuations in our superconducting nanostructured devices.  
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  Notes Not attributed to any publisher! File name: PR9VervekinSfin_f.doc; Author: JAOLEARY; Last modification date: 2004-02-26 Approved no  
  Call Number Serial 1751  
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