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Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. |
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Title |
Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction |
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Journal Article |
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Year |
1990 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Communications |
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Volume |
75 |
Issue |
8 |
Pages |
639-641 |
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Keywords  |
impure superconductors |
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Abstract |
Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that the frequency range of the enhancement effect narrows with the decrease of the electron mean free path, l, and at l ⩽ 1 nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on l are explained by taking into account strong electron-electron interaction in impure metals. |
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0038-1098 |
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1687 |
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Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. |
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Title |
Влияние магнитного поля на захват свободных носителей мелкими примесями в Ge |
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Journal Article |
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Year |
1990 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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Volume |
24 |
Issue |
10 |
Pages |
1881-1883 |
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Keywords |
impurities, photoconductivity, Ge, capture of free carriers, magnetic field |
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Abstract |
Цель настоящей работы — измерение кинетики примесной фотопроводимости в квантующих магнитных полях. |
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Russian |
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1755 |
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Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S. |
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Title |
Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates |
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Journal Article |
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Year |
2021 |
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Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
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Volume |
15 |
Issue |
5 |
Pages |
054014 |
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Keywords |
InOx, Au/Ni, NbN films |
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We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics. |
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2331-7019 |
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1769 |
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Author |
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
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Title |
Effect of a high magnetic field on the spectrum of donors in InSb |
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Journal Article |
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Year |
1977 |
Publication |
Fizika i Tekhnika Poluprovodnikov |
Abbreviated Journal |
Fizika i Tekhnika Poluprovodnikov |
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Volume |
11 |
Issue |
12 |
Pages |
2373-2375 |
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Keywords |
InSb, energy spectrum, donors, high magnetic field |
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Воздействие сильного магнитного поля на спектр доноров в InSb |
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1729 |
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Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. |
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Title |
Effect of a strong magnetic field on the spectrum of donors in InSb |
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Journal Article |
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Year |
1978 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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Volume |
11 |
Issue |
12 |
Pages |
1395-1397 |
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Keywords |
InSb, spectrum of donors, strong magnetic field |
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1725 |
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Проходцов, А. И.; Голиков, А. Д.; Ан, П. П.; Ковалюк, В. В.; Гольцман, Г. Н. |
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Title |
Влияние покрытия из оксида кремния на эффективность фокусирующего решеточного элемента связи из нитрида кремния |
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Conference Article |
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Year |
2019 |
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Proc. IWQO |
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Proc. IWQO |
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201-203 |
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integrated optics, silicon nitride, focusing grating coupler |
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В работе экспериментально изучена зависимость эффективности фокусирующего решеточного элемента связи от периода и фактора заполнения до и после напыления верхнего слоя из оксида кремния. Полученные данные имеют практическое значение при создании перестраиваемых интегрально-оптических устройств на нитриде кремния. |
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Duplicated as 1188 |
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1282 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Lugovaya, G. Ya.; Serebryakova, N. A.; Chinkova, E. V. |
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Title |
Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials |
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Journal Article |
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Year |
1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Volume |
5 |
Issue |
6 |
Pages |
1129-1140 |
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Keywords |
IR HEB detectors |
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Abstract |
Characteristics of infrared radiation detectors based on electron heating in thin superconducting films transformed at T ≤ Tc to a resistive state by transport current and, if necessary, by magnetic field are investigated. A comparison is made of the characteristics of the detectors fabricated of different materials: aluminium, niobium, Mo0.5Re0.5. Some devices with different topology of the reception area are considered. Electron heating detectors are comparable by their sensitivity with superconducting bolometers, but differ in a high fast-response. |
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0131-5366 |
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1673 |
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Author |
Svechnikov, S. I.; Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Y. B.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Y. P.; Kaurova, N. S.; Voronov, B. M.; Gol’tsman, G. N. |
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Title |
Superconducting hot electron bolometer mixer for middle IR range |
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Conference Article |
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2006 |
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Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Abbreviated Journal |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
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2 |
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686-687 |
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IR NbN HEB mixer, detector, GaAs substrate |
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The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator. |
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4023440 |
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1297 |
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Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Yu. P.; Kaurova, N. S.; Voronov, B. M.; Gol'tsman, G. N. |
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Title |
Hot electron bolometer mixer for 20 – 40 THz frequency range |
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Conference Article |
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Year |
2005 |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 16th Int. Symp. Space Terahertz Technol. |
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393-397 |
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IR NbN HEB mixers |
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The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator. |
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Göteborg, Sweden |
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369 |
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Author |
Pentin, Ivan; Finkel, Matvey; Maslennikov, Sergey; Vakhtomin, Yuri; Smirnov, Konstantin; Kaurova, Nataliya; Goltsman, Gregory |
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Title |
Superconducting hot-electron-bolometer mixers for the mid-IR |
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2017 |
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Rus. J. Radio Electron. |
Abbreviated Journal |
Rus. J. Radio Electron. |
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10 |
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IR NbN HEB mixers |
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The work presents the result of development of the NbN superconducting hot-electron-bolometer (HEB) mixer. The sensitive element of the mixer is directly coupled to mid-IR radiation, and doesn’t have planar metallic antenna. Investigations of noise characteristics of NbN HEB mixer were performed at the frequency 28.4 THz (λ = 10.6 µm) by using gas-discharge CW CO2-laser without consideration of optical and electrical losses in the heterodyne receiver. The noise temperature of NbN HEB mixer with the size of the sensitive element 10 µm × 10 µm was 2320 K (~ 1.5hν/kB) at the heterodyne frequency of 28.4 THz. The noise temperature was determined by measuring the Y-factor taking into account the term which describes fluctuations of zero-point oscillations in accordance with the fluctuation-dissipation theorem of Calle-Welton. Isothermal method was used to estimate the absorbed heterodyne radiation power which was 9 µW at the optimal operating point for the minimum noise temperature of NbN HEB mixer. |
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1684-1719 |
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http://jre.cplire.ru/jre/oct17/9/abstract.html (Russian) Гетеродинный приемник со сверхпроводниковым смесителем на эффекте электронного разогрева для среднего инфракрасного диапазона |
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1747 |
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