Pearlman, A., Cross, A., Slysz, W., Zhang, J., Verevkin, A., Currie, M., et al. (2005). Gigahertz counting rates of NbN single-photon detectors for quantum communications. IEEE Trans. Appl. Supercond., 15(2), 579–582.
Abstract: We report on the GHz counting rate and jitter of our nanostructured superconducting single-photon detectors (SSPDs). The devices were patterned in 4-nm-thick and about 100-nm-wide NbN meander stripes and covered a 10-/spl mu/m/spl times/10-/spl mu/m area. We were able to count single photons at both the visible and infrared telecommunication wavelengths at rates of over 2 GHz with a timing jitter of below 18 ps. We also present the model for the origin of the SSPD switching dynamics and jitter, based on the time-delay effect in the phase-slip-center formation mechanism during the detector photoresponse process. With further improvements in our readout electronics, we expect that our SSPDs will reach counting rates of up to 10 GHz. An integrated quantum communications receiver based on two fiber-coupled SSPDs and operating at 1550-nm wavelength is also presented.
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Yang, J. K. W., Dauler, E., Ferri, A., Pearlman, A., Verevkin, A., Gol’tsman, G., et al. (2005). Fabrication development for nanowire GHz-counting-rate single-photon detectors. IEEE Trans. Appl. Supercond., 15(2), 626–630.
Abstract: We have developed a fabrication process for GHz-counting-rate, single-photon, high-detection-efficiency, NbN, nanowire detectors. We have demonstrated two processes for the device patterning, one based on the standard polymethylmethacrylate (PMMA) organic positive-tone electron-beam resist, and the other based on the newer hydrogen silsesquioxane (HSQ) negative-tone spin-on-glass resist. The HSQ-based process is simple and robust, providing high resolution and the prospect of high fill-factors. Initial testing results show superconductivity in the films, and suggest that the devices exhibit photosensitivity.
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Gol'tsman, G. N., Korneev, A., Rubtsova, I., Milostnaya, I., Chulkova, G., Minaeva, O., et al. (2005). Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications. Phys. Stat. Sol. (C), 2(5), 1480–1488.
Abstract: We present our progress on the research and development of NbN superconducting single‐photon detectors (SSPD's) for ultrafast counting of near‐infrared photons for secure quantum communications. Our SSPD's operate in the quantum detection mode based on the photon‐induced hotspot formation and subsequent development of a transient resistive barrier across an ultrathin and submicron‐width superconducting stripe. The devices are fabricated from 4‐nm‐thick NbN films and kept in the 4.2‐ to 2‐K temperature range. The detector experimental quantum efficiency in the photon‐counting mode reaches above 40% for the visible light and up to 30% in the 1.3‐ to 1.55‐µm wavelength range with dark counts below 0.01 per second. The experimental real‐time counting rate is above 2 GHz and is limited by our readout electronics. The SSPD's timing jitter is below 18 ps, and the best‐measured value of the noise‐equivalent power (NEP) is 5 × 10–21 W/Hz1/2 at 1.3 µm. In terms of quantum efficiency, timing jitter, and maximum counting rate, our NbN SSPD's significantly outperform semiconductor avalanche photodiodes and photomultipliers in the 1.3‐ to 1.55‐µm range.
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Słysz, W., Węgrzecki, M., Bar, J., Grabiec, P., Gol'tsman, G. N., Verevkin, A., et al. (2005). NbN superconducting single-photon detector coupled with a communication fiber. Elektronika : konstrukcje, technologie, zastosowania, 46(6), 51–52.
Abstract: We present novel superconducting single-photon detectors (SSPDs), based on ultrathin NbN films, designed for fiber-based quantum communications (lambda = 1.3 žm and 1.55 žm). For fiber-based operation, our SSPDs contain a special micromechanical construction integrated with the NbN structure, which enables efficient and mechanically very stabile fiber coupling. The detectors combine GHz counting rate, high quantum efficiency and very low level of dark counts. At 1.3 – 1.55 žm wavelength range our detector exhibits a quantum efficiency up to 10%.
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Verevkin, A., Pearlman, A., Slysz, W., Zhang, J., Currie, M., Korneev, A., et al. (2004). Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications. J. Modern Opt., 51(9-10), 1447–1458.
Abstract: The paper reports progress on the design and development of niobium-nitride, superconducting single-photon detectors (SSPDs) for ultrafast counting of near-infrared photons for secure quantum communications. The SSPDs operate in the quantum detection mode, based on photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-width superconducting stripe. The devices are fabricated from 3.5 nm thick NbN films and kept at cryogenic (liquid helium) temperatures inside a cryostat. The detector experimental quantum efficiency in the photon-counting mode reaches above 20% in the visible radiation range and up to 10% at the 1.3–1.55 μn infrared range. The dark counts are below 0.01 per second. The measured real-time counting rate is above 2 GHz and is limited by readout electronics (the intrinsic response time is below 30 ps). The SSPD jitter is below 18 ps, and the best-measured value of the noise-equivalent power (NEP) is 2 × 10−18 W/Hz1/2. at 1.3 μm. In terms of photon-counting efficiency and speed, these NbN SSPDs significantly outperform semiconductor avalanche photodiodes and photomultipliers.
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Goltsman, G., Korneev, A., Izbenko, V., Smirnov, K., Kouminov, P., Voronov, B., et al. (2004). Nano-structured superconducting single-photon detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 520(1-3), 527–529.
Abstract: NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications.
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Gol’tsman, G. N., Smirnov, K., Kouminov, P., Voronov, B., Kaurova, N., Drakinsky, V., et al. (2003). Fabrication of nanostructured superconducting single-photon detectors. IEEE Trans. Appl. Supercond., 13(2), 192–195.
Abstract: Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed.
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Zhang, J., Słysz, W., Pearlman, A., Verevkin, A., Sobolewski, R., Okunev, O., et al. (2003). Time delay of resistive-state formation in superconducting stripes excited by single optical photons. Phys. Rev. B, 67(13), 132508 (1 to 4).
Abstract: We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.
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Somani, S., Kasapi, S., Wilsher, K., Lo, W., Sobolewski, R., & Gol’tsman, G. (2001). New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect. J. Vac. Sci. Technol. B, 19(6), 2766–2769.
Abstract: A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics.
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Gol’tsman, G. N., Okunev, O., Chulkova, G., Lipatov, A., Semenov, A., Smirnov, K., et al. (2001). Picosecond superconducting single-photon optical detector. Appl. Phys. Lett., 79(6), 705–707.
Abstract: We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts.
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Il'in, K. S., Verevkin, A. A., Gol'tsman, G. N., & Sobolewski, R. (1999). Infrared hot-electron NbN superconducting photodetectors for imaging applications. Supercond. Sci. Technol., 12(11), 755–758.
Abstract: We report an effective quantum efficiency of 340, responsivity >200 A W-1 (>104 V W-1) and response time of 27±5 ps at temperatures close to the superconducting transition for NbN superconducting hot-electron photodetectors (HEPs) in the near-infrared and optical ranges. Our studies were performed on a few nm thick NbN films deposited on sapphire substrates and patterned into µm-size multibridge detector structures, incorporated into a coplanar transmission line. The time-resolved photoresponse was studied by means of subpicosecond electro-optic sampling with 100 fs wide laser pulses. The quantum efficiency and responsivity studies of our photodetectors were conducted using an amplitude-modulated infrared beam, fibre-optically coupled to the device. The observed picosecond response time and the very high efficiency and sensitivity of the NbN HEPs make them an excellent choice for infrared imaging photodetectors and input optical-to-electrical transducers for superconducting digital circuits.
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Il'in, K. S., Currie, M., Lindgren, M., Milostnaya, I. I., Verevkin, A. A., Gol'tsman, G. N., et al. (1999). Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors. IEEE Trans. Appl. Supercond., 9(2), 3338–3341.
Abstract: We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films.
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Lindgren, M., Currie, M., Zeng, W. - S., Sobolewski, R., Cherednichenko, S., Voronov, B., et al. (1998). Picosecond response of a superconducting hot-electron NbN photodetector. Appl. Supercond., 6(7-9), 423–428.
Abstract: The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W.
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Shcherbatenko, M., Elezov, M., Manova, N., Sedykh, K., Korneev, A., Korneeva, Y., et al. (2021). Single-pixel camera with a large-area microstrip superconducting single photon detector on a multimode fiber. Appl. Phys. Lett., 118(18), 181103.
Abstract: High sensitivity imaging at the level of single photons is an invaluable tool in many areas, ranging from microscopy to astronomy. However, development of single-photon sensitive detectors with high spatial resolution is very non-trivial. Here we employ the single-pixel imaging approach and demonstrate a proof-of-principle single-pixel single-photon imaging setup. We overcome the problem of low light gathering efficiency by developing a large-area microstrip superconducting single photon detector coupled to a multi-mode optical fiber interface. We show that the setup operates well in the visible and near infrared spectrum, and is able to capture images at the single-photon level.
We thank Philipp Zolotov and Pavel Morozov for NbN film fabrication, ARC coating, and fiber coupling of the detector. We also thank Swabian Instruments GmbH and Dr. Helmut Fedder personally for the kindly provided experimental equipment (Time Tagger Ultra 8). The work in the part of SNSPD research and development was supported by the Russian Foundation for Basic Research Project No. 18-29-20100. The work in the part of the optical setup and imaging was supported by Russian Foundation for Basic Research Project No. 20-32-51004.
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Vodolazov, D. Y., Manova, N. N., Korneeva, Y. P., & Korneev, A. A. (2020). Timing jitter in NbN superconducting microstrip single-photon detector. Phys. Rev. Applied, 14(4), 044041 (1 to 8).
Abstract: We experimentally study timing jitter of single-photon detection by NbN superconducting strips with width w ranging from 190 nm to 3μm. We find that timing jitter of both narrow (190 nm) and micron-wide strips is about 40 ps at currents where internal detection efficiency η saturates and it is close to our instrumental jitter. We also calculate intrinsic timing jitter in wide strips using the modified time-dependent Ginzburg-Landau equation coupled with a two-temperature model. We find that with increasing width the intrinsic timing jitter increases and the effect is most considerable at currents where a rapid growth of η changes to saturation. We relate it with complicated vortex and antivortex dynamics, which depends on a photon’s absorption site across the strip and its width. The model also predicts that at current close to depairing current the intrinsic timing jitter of a wide strip could be about ℏ/kBTc (Tc is a critical temperature of superconductor), i.e., the same as for a narrow strip.
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