Jang, Y. R., Yoo, K. - H., & Park, S. M. (2010). Rapid thermal annealing of ZnO thin films grown at room temperature. J. Vac. Sci. Technol. A, 28(2), 4.
Abstract: The authors successfully obtained high quality ZnO thin films by growing them at room temperature (RT) and postannealing by rapid thermal annealing (RTA). The thin films were grown by pulsed laser deposition on Si (100) substrates at RT, and RTA was performed under various temperatures and ambient conditions. Based on the UV emission to visible emission ratio in RT photoluminescence (PL) spectra, the optimum film was obtained at annealing temperature ~700 °C in an ambient of Ar, N2, or O2 at 0.1 Torr, while the optimum annealing temperature was above 1100 °C in the air ambient at atmospheric pressure. The morphology and structure of the films in different RTA conditions were investigated by using field emission scanning electron microscopy and grazing incidence x-ray diffraction, and were discussed in conjunction with the PL data.
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Edlmayr, V., Harzer, T. P., Hoffmann, R., Kiener, D., Scheu, C., & Mitterer, C. (2011). Effects of thermal annealing on the microstructure of sputtered Al2O3 coatings. J. Vac. Sci. Technol. A, 29(4), 8.
Abstract: The morphology and microstructure of Al2O3 thin films deposited by pulsed direct current magnetron sputtering were studied in the as-grown state and after vacuum annealing at 1000 °C for 12 h using transmission electron microscopy. For the coating deposited under low ion bombardment conditions, the film consists of small γ- and/or δ-Al2O3 grains embedded in an amorphous matrix. The grain size at the region close to the interface to the substrate was much larger than that of the remaining layer. Growth of the γ-Al2O3 phase is promoted during annealing but no transformation to α-Al2O3 was detected. For high-energetic growth conditions, clear evidence for γ-Al2O3 formation was found in the upper part of the coating with grain size much larger than for low-energetic growth, but the film was predominately amorphous at the interface region. Annealing resulted in the transformation of γ-Al2O3 to α-Al2O3, while the mainly amorphous part crystallized to γ-Al2O3.
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Zwiller, V. <cc><81>ry, Blom, H., Jonsson, P., Panev, N., Jeppesen, S., Tsegaye, T., et al. (2001). Single quantum dots emit single photons at a time: Antibunching experiments. Appl. Phys. Lett., 78(17), 2476.
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Schwaab, G. W., Hübers, H. - W., Schubert, J., Erichsen, P., Gol'tsman, G., Semenov, A., et al. (1999). A high resolution spectrometer for the investigation of molecular structures in the THZ range. In Proc. 10th Int. Symp. Space Terahertz Technol. (pp. 530–538).
Abstract: A status report on the design study of a novel tunable far-infrared (TuFTR) spectrometer for the investigation of the structure of weakly bound molecular complexes is given. The goal is a sensitive TuFIR spectrometer with full frequency coverage from 1-6 THz. To hit the goal, advanced sources (e.g. p-Ge lasers) and detectors (e.g. superconducting hot electron bolometric (HEB) mixers) shall be employed to extend the technique of cavity ringdown spectroscopy, that is currently used at optical and infrared frequencies to the FIR spectral range. Critical for such a system are high-Q resonators that still allow good optical coupling, and wideband antireflection coatings to increase detector sensitivity and decrease optical path losses. 2 nd order effective media theory and an iterative multilayer algorithm have been employed to design wideband antireflection coatings for dielectrics with large dielectric constants like Ge or Si. Taking into account 6 layers, for Si bandwidths of 100% of the center frequency could be obtained with power reflectivities below 1% for both polarizations simultaneously. Wideband dielectric mirrors including absorption losses were also studied yielding a bandwidth of about 50% with reflectivities larger than 99.5%.
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Benford, D. J., Moseley, S. H., & Chervenak, J. A. (2002). Mission requirements for ultralow-background, large format bolometer arrays. In Proc. Far-Infrared Submillimeter, & Millimeter Detector Workshop. Monterey, California.
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