Records |
Author |
Milostnaya, I.; Korneev, A.; Tarkhov, M.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G. |
Title |
Superconducting single photon nanowire detectors development for IR and THz applications |
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Journal Article |
Year |
2008 |
Publication |
J. Low Temp. Phys. |
Abbreviated Journal |
J. Low Temp. Phys. |
Volume |
151 |
Issue |
1-2 |
Pages |
591-596 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We present our progress in the development of superconducting single-photon detectors (SSPDs) based on meander-shaped nanowires made from few-nm-thick superconducting films. The SSPDs are operated at a temperature of 2–4.2 K (well below T c ) being biased with a current very close to the nanowire critical current at the operation temperature. To date, the material of choice for SSPDs is niobium nitride (NbN). Developed NbN SSPDs are capable of single photon counting in the range from VIS to mid-IR (up to 6 μm) with a record low dark counts rate and record-high counting rate. The use of a material with a low transition temperature should shift the detectors sensitivity towards longer wavelengths. We present state-of-the art NbN SSPDs as well as the results of our recent approach to expand the developed SSPD technology by the use of superconducting materials with lower T c , such as molybdenum rhenium (MoRe). MoRe SSPDs first were made and tested; a single photon response was obtained. |
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0022-2291 |
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1244 |
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Tarkhov, M.; Morozov, D.; Mauskopf, P.; Seleznev, V.; Korneev, A.; Kaurova, N.; Rubtsova, I.; Minaeva, O.; Voronov, B.; Goltsman, G. |
Title |
Single photon counting detector for THz radioastronomy |
Type |
Conference Article |
Year |
2006 |
Publication |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages |
119-122 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
In this paper we present the results of the research on the superconducting NbN-ultrathin-film single- photon detectors (SSPD) which are capable to detect single quanta in middle IR range. The detection mechanism is based on the hotspot formation in quasi-two-dimensional superconducting structures upon photon absorption. Spectral measurements showed that up to 5.7 gm wavelength (52 THz) the SSPD exhibits single-photon sensitivity. Reduction of operation temperature to 1.6 K allowed us to measure quantum efficiency of -4% at 60 THz. Although further decrease of the operation temperature far below 1 K does not lead to any significant increase of quantum efficiency. We expect that the improvement of the SSPD's performance at reduced operation temperature will make SSPD a practical detector with high characteristics for much lower THz frequencies as well. |
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1438 |
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Smirnov, K.; Korneev, A.; Minaeva, O.; Divochij, A.; Rubtsova, I.; Antipov, A.; Ryabchun, S.; Okunev, O.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Kaurova, N.; Seleznev, V.; Korotetskaya, Y.; Gol’tsman, G. |
Title |
Superconducting single-photon detector for near- and middle IR wavelength range |
Type |
Conference Article |
Year |
2006 |
Publication |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Abbreviated Journal |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Volume |
2 |
Issue |
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Pages |
684-685 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
Presented in this paper are the results of research of NbN-film superconducting single-photon detector. At 2 K temperature, quantum efficiency in the visible light (0.56 mum) reaches 30-40 %. With the wavelength increase quantum efficiency decreases and comes to 20% at 1.55 mum and 0.02% at 5.6 mum. Minimum dark counts rate is 2times10-4s-1. The jitter of detector is 35 ps. The detector was successfully implemented for integrated circuits non-invasive optical testing. It is also perspective for quantum cryptography systems |
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Russian |
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1447 |
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Goltsman, G.; Korneev, A.; Izbenko, V.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, R. |
Title |
Nano-structured superconducting single-photon detectors |
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Journal Article |
Year |
2004 |
Publication |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
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Volume |
520 |
Issue |
1-3 |
Pages |
527-529 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications. |
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0168-9002 |
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1495 |
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Sobolewski, R.; Zhang, J.; Slysz, W.; Pearlman, A.; Verevkin, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Goltsman, G. N. |
Title |
Ultrafast superconducting single-photon optical detectors |
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Conference Article |
Year |
2003 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
5123 |
Issue |
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Pages |
1-11 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography. |
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SPIE |
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Spigulis, J.; Teteris, J.; Ozolinsh, M.; Lusis, A. |
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Advanced Optical Devices, Technologies, and Medical Applications |
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1513 |
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Gol’tsman, G. N.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Zhang, J.; Verevkin, A.; Sobolewski, R. |
Title |
Fabrication of nanostructured superconducting single-photon detectors |
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Journal Article |
Year |
2003 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
13 |
Issue |
2 |
Pages |
192-195 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed. |
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1558-2515 |
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1515 |
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Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. |
Title |
Superconducting single photon detector integrated with optical cavity |
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Conference Article |
Year |
2011 |
Publication |
Proc. MLPLIT |
Abbreviated Journal |
Proc. MLPLIT |
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143-145 |
Keywords |
NbN SSPD, cavity |
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Suzdal / Vladimir (Russia) |
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Modern laser physics and laser-information technologies for science and manufacture |
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1st international russian-chinese conference / youthschool-workshop |
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September 23-28, 2011 |
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1385 |
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Lobanov, Y.; Shcherbatenko, M.; Semenov, A.; Kovalyuk, V.; Kahl, O.; Ferrari, S.; Korneev, A.; Ozhegov, R.; Kaurova, N.; Voronov, B. M.; Pernice, W. H. P.; Gol'tsman, G. N. |
Title |
Superconducting nanowire single photon detector for coherent detection of weak signals |
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Journal Article |
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2017 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
Volume |
27 |
Issue |
4 |
Pages |
1-5 |
Keywords |
NbN SSPD mixer, SNSPD, nanophotonic waveguide |
Abstract |
Traditional photon detectors are operated in the direct detection mode, counting incident photons with a known quantum efficiency. Here, we have investigated a superconducting nanowire single photon detector (SNSPD) operated as a photon counting mixer at telecommunication wavelength around 1.5 μm. This regime of operation combines excellent sensitivity of a photon counting detector with excellent spectral resolution given by the heterodyne technique. Advantageously, we have found that low local oscillator (LO) power of the order of hundreds of femtowatts to a few picowatts is sufficient for clear observation of the incident test signal with the sensitivity approaching the quantum limit. With further optimization, the required LO power could be significantly reduced, which is promising for many practical applications, such as the development of receiver matrices or recording ultralow signals at a level of less-than-one-photon per second. In addition to a traditional NbN-based SNSPD operated with normal incidence coupling, we also use detectors with a travelling wave geometry, where a NbN nanowire is placed on the top of a Si 3 N 4 nanophotonic waveguide. This approach is fully scalable and a large number of devices could be integrated on a single chip. |
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1051-8223 |
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1206 |
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Ryabchun, S.; Korneev, A.; Matvienko, V.; Smirnov, K.; Kouminov, P.; Seleznev, V.; Kaurova, N.; Voronov, B.; Gol’tsman, G. N. |
Title |
Superconducting single photon detectors array based on hot electron phenomena |
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Conference Article |
Year |
2004 |
Publication |
Proc. 15th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 15th Int. Symp. Space Terahertz Technol. |
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242-247 |
Keywords |
NbN SSPD arrays, SNSPD |
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In this paper we propose to use time domain multiplexing for large format arrays of superconducting single photon detectors (SSPDs) of the terahertz, visible and infrared frequency ranges based on ultrathin superconducting NbN films. Effective realization of time domain multiplexing for SSPD arrays is possible due to a short electric pulse of the SSPD as response to radiation quantum absorption, picosecond jitter and extremely low noise equivalent power (NEP). We present experimental results of testing 2×2 arrays in the infrared waveband. The measured noise equivalent power in the infrared and expected for the terahertz waveband is 10 – 21 WHz -1/2 . The best quantum efficiency (QE) of SSPD is 50% at 1.3 µm wavelength. |
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1493 |
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Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
Title |
Gap frequency and photon absorption in a hot electron bolometer |
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Conference Article |
Year |
2016 |
Publication |
Proc. 27th Int. Symp. Space Terahertz Technol. |
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Proc. 27th Int. Symp. Space Terahertz Technol. |
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121 |
Keywords |
NbN HEB; Si membrane |
Abstract |
The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015. |
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