Records |
Author |
Koshelets, V. P.; Shitov, S. V.; Ermakov, A. B.; Filippenko, L. V.; Koryukin, O. V.; Khudchenko, A. V.; Torgashin, M. Yu.; Yagoubov, P. A.; Hoogeveen, R. W. M.; Pylypenko, O. M. |
Title |
Superconducting integrated receiver for TELIS |
Type |
Journal Article |
Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
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Volume |
15 |
Issue |
2 |
Pages |
960-963 |
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SIR |
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1051-8223 |
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517 |
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Author |
Koshelets, V. P.; Ermakov, A. B.; Filippenko, L. V.; Khudchenko, A. V.; Kiselev, O. S.; Sobolev, A. S.; Torgashin, M. Y.; Yagoubov, P. A.; Hoogeveen, R. W. M.; Wild, W. |
Title |
Superconducting integrated submillimeter receiver for TELIS |
Type |
Journal Article |
Year |
2007 |
Publication |
IEEE Trans. Appl. Supercond. |
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Volume |
17 |
Issue |
2 |
Pages |
336-342 |
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1051-8223 |
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524 |
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Author |
Torgashin, Mikhail Yu.; Koshelets, Valery P.; Dmitriev, Pavel N.; Ermakov, Andrey B.; Filippenko, Lyudmila V.; Yagoubov, Pavel A. |
Title |
Superconducting Integrated Receiver Based on Nb-AlN-NbN-Nb Circuits |
Type |
Journal Article |
Year |
2007 |
Publication |
IEEE Trans. Appl. Supercond. |
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Volume |
17 |
Issue |
2 |
Pages |
379-382 |
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1051-8223 |
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525 |
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Author |
Gupta, D.; Kadin, A. M. |
Title |
Single-photon-counting hotspot detector with integrated RSFQ readout electronics |
Type |
Journal Article |
Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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Volume |
9 |
Issue |
2 |
Pages |
4487-4490 |
Keywords |
RSFQ, SSPD, SNSPD |
Abstract |
Absorption of an infrared photon in an ultrathin film (such as 10-nm NbN) creates a localized nonequilibrium hotspot on the submicron length scale and sub-ns time scale. If a strip /spl sim/1 /spl mu/m wide is biased in the middle of the superconducting transition, this hotspot will lead to a resistance pulse with amplitude proportional to the energy of the incident photon. This resistance pulse, in turn, can be converted to a current pulse and inductively coupled to a SQUID amplifier with a digitized output, operating at 4 K or above. A preliminary design analysis indicates that this data can be processed on-chip, using ultrafast RSFQ digital circuits, to obtain a sensitive infrared detector for wavelengths up to 10 /spl mu/m and beyond, with bandwidth of 1 GHz, that counts individual photons and measures their energy with 25 meV resolution. This proposed device combines the speed of a hot-electron bolometer with the single-photon-counting ability of a transition-edge microcalorimeter, to obtain an infrared detector with sensitivity, speed, and spectral selectivity that are unmatched by any alternative technology. |
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1080 |
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Author |
Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
Title |
Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
Type |
Journal Article |
Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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Volume |
9 |
Issue |
2 |
Pages |
3216-3219 |
Keywords |
RSFQ, NbN, SIS |
Abstract |
A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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1081 |
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