Yang, J. K. W., Dauler, E., Ferri, A., Pearlman, A., Verevkin, A., Gol’tsman, G., et al. (2005). Fabrication development for nanowire GHz-counting-rate single-photon detectors. IEEE Trans. Appl. Supercond., 15(2), 626–630.
Abstract: We have developed a fabrication process for GHz-counting-rate, single-photon, high-detection-efficiency, NbN, nanowire detectors. We have demonstrated two processes for the device patterning, one based on the standard polymethylmethacrylate (PMMA) organic positive-tone electron-beam resist, and the other based on the newer hydrogen silsesquioxane (HSQ) negative-tone spin-on-glass resist. The HSQ-based process is simple and robust, providing high resolution and the prospect of high fill-factors. Initial testing results show superconductivity in the films, and suggest that the devices exhibit photosensitivity.
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Gol’tsman, G. N., Smirnov, K., Kouminov, P., Voronov, B., Kaurova, N., Drakinsky, V., et al. (2003). Fabrication of nanostructured superconducting single-photon detectors. IEEE Trans. Appl. Supercond., 13(2), 192–195.
Abstract: Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed.
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Il'in, K. S., Currie, M., Lindgren, M., Milostnaya, I. I., Verevkin, A. A., Gol'tsman, G. N., et al. (1999). Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors. IEEE Trans. Appl. Supercond., 9(2), 3338–3341.
Abstract: We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films.
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Lobanov, Y., Shcherbatenko, M., Semenov, A., Kovalyuk, V., Kahl, O., Ferrari, S., et al. (2017). Superconducting nanowire single photon detector for coherent detection of weak signals. IEEE Trans. Appl. Supercond., 27(4), 1–5.
Abstract: Traditional photon detectors are operated in the direct detection mode, counting incident photons with a known quantum efficiency. Here, we have investigated a superconducting nanowire single photon detector (SNSPD) operated as a photon counting mixer at telecommunication wavelength around 1.5 μm. This regime of operation combines excellent sensitivity of a photon counting detector with excellent spectral resolution given by the heterodyne technique. Advantageously, we have found that low local oscillator (LO) power of the order of hundreds of femtowatts to a few picowatts is sufficient for clear observation of the incident test signal with the sensitivity approaching the quantum limit. With further optimization, the required LO power could be significantly reduced, which is promising for many practical applications, such as the development of receiver matrices or recording ultralow signals at a level of less-than-one-photon per second. In addition to a traditional NbN-based SNSPD operated with normal incidence coupling, we also use detectors with a travelling wave geometry, where a NbN nanowire is placed on the top of a Si 3 N 4 nanophotonic waveguide. This approach is fully scalable and a large number of devices could be integrated on a single chip.
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Semenov, A. D., Heusinger, M. A., Renk, K. F., Menschikov, E., Sergeev, A. V., Elant'ev, A. I., et al. (1997). Influence of phonon trapping on the performance of NbN kinetic inductance detectors. IEEE Trans. Appl. Supercond., 7(2), 3083–3086.
Abstract: Voltage and microwave photoresponse of NbN thin films to modulated and pulsed optical radiation reveals, far below the superconducting transition, a response time consistent with the lifetime of nonequilibrium quasiparticles. We show that even in 5 nm thick films at 4.2 K the phonon trapping is significant resulting in a quasiparticle lifetime of a few nanoseconds that is an order of magnitude larger than the recombination time. Values and temperature dependence of the quasiparticle lifetime obey the Bardeen-Cooper-Schrieffer theory and are in quantitative agreement with the electron-phonon relaxation rate determined from the resistive response near the superconducting transition. We discuss a positive effect of the phonon trapping on the performance of kinetic inductance detectors.
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