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Author Kampfrath, Tobias; Perfetti, Luca; von Volkmann, Konrad; Aguirre, Carla M.; Desjardins, Patrick; Martel, Richard; Frischkorn, Christian; Wolf, Martin url  doi
openurl 
  Title Optical response of single-wall carbon nanotube sheets in the far-infrared spectral range from 1 THz to 40 THz Type Journal Article
  Year 2007 Publication Physica Status Solidi (B) Abbreviated Journal Phys. Stat. Sol. (B)  
  Volume 244 Issue 11 Pages 3950-3954  
  Keywords (down) single wall, carbon nanotube, SWNT, SWCNT, CNT, detector, sensor, TDS  
  Abstract The optical properties of single-wall carbon nanotube sheets in the far-infrared have been investigated with THz time-domain spectroscopy. Over a wide frequency range from 1 THz to 40 THz, the complex dielectric function of the nanotube sample has been derived. Our data can be excellently reproduced by a Drude-Lorentz model function. The extracted fit parameters such as Lorentz resonance frequency and plasma frequency are consistent with values obtained by scanning tunneling techniques. We discuss the origin of both the Lorentz and Drude contribution in terms of direct and indirect optical transitions.  
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  ISSN 0370-1972 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 569  
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Author Zwiller, V.; Aichele, T.; Seifert, W.; Persson, J.; Benson, O. url  doi
openurl 
  Title Generating visible single photons on demand with single InP quantum dots Type Journal Article
  Year 2003 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 82 Issue 10 Pages 1509-1511  
  Keywords (down) single photon, quantum dot, InP  
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  ISSN 0003-6951 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 503  
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Author Kawano, Yukio; Ishibashi, Koji url  doi
openurl 
  Title An on-chip near-field terahertz probe and detector Type Journal Article
  Year 2008 Publication Nature Photonics Abbreviated Journal Nature Photon  
  Volume 2 Issue 10 Pages 618-621  
  Keywords (down) single molecule, terahertz, THz, near-field, microscopy, imaging, 2DEG, GaAs/AlGaAs, detector, applications  
  Abstract The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging.  
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  ISSN 1749-4885 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 570  
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Author Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory url  openurl
  Title Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors Type Abstract
  Year 2020 Publication Graphene and 2dm Virt. Conf. Abbreviated Journal Graphene and 2DM Virt. Conf.  
  Volume Issue Pages  
  Keywords (down) single layer graphene, SLG, CVD, plasmons, FET  
  Abstract Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464.  
  Address Grenoble, France  
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  Area Expedition Conference Graphene and 2dm Virtual Conference & Expo  
  Notes Approved no  
  Call Number Serial 1743  
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Author Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I. url  doi
openurl 
  Title Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices Type Journal Article
  Year 2018 Publication Nanotechnol. Abbreviated Journal Nanotechnol.  
  Volume 29 Issue 24 Pages 245204 (1 to 8)  
  Keywords (down) single layer graphene, graphene nanoribbons  
  Abstract We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.  
  Address Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia  
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  ISSN 0957-4484 ISBN Medium  
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  Notes PMID:29553479 Approved no  
  Call Number Serial 1308  
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