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| Author | Zhang, X.; Lita, A. E.; Smirnov, K.; Liu, H. L.; Zhu, D.; Verma, V. B.; Nam, S. W.; Schilling, A. | ||||
| Title | Strong suppression of the resistivity near the superconducting transition in narrow microbridges in external magnetic fields | Type | Journal Article | ||
| Year | 2020 | Publication | Phys. Rev. B | Abbreviated Journal | Phys. Rev. B |
| Volume | 101 | Issue | 6 | Pages | 060508 (1 to 6) |
Keywords  |
MoSi, WSi films | ||||
| Abstract | We have investigated a series of superconducting bridges based on homogeneous amorphous WSi and MoSi films, with bridge widths w ranging from 2 to 1000μm and film thicknesses d∼4−6 and 100 nm. Upon decreasing the bridge widths below the respective Pearl lengths, we observe in all cases distinct changes in the characteristics of the resistive transitions to superconductivity. For each of the films, the resistivity curves R(B,T) separate at a well-defined and field-dependent temperature T∗(B) with decreasing the temperature, resulting in a dramatic suppression of the resistivity and a sharpening of the transitions with decreasing bridge width w. The associated excess conductivity in all the bridges scales as 1/w, which may suggest either the presence of a highly conducting region that is dominating the electric transport, or a change in the vortex dynamics in narrow enough bridges. We argue that this effect can only be observed in materials with sufficiently weak vortex pinning. | ||||
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| ISSN | 2469-9950 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1800 | |||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 6 |
| Keywords |
Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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| Author | Бурмистрова, А. В.; Девятов, И. А. | ||||
| Title | Расчет электронного транспорта в гетероструктурах, содержащих многозонные сверхпроводники | Type | Conference Article | ||
| Year | 2014 | Publication | Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» | Abbreviated Journal | |
| Volume | 1 | Issue | Pages | 21-22 | |
| Keywords |
N/I/Sp junctions | ||||
| Abstract | В рамках приближения сильной связи теоретически рассчитаны проводимости контактов вида нормальный металл/изолятор/одноорбитальный сверхпроводник с p-типом сверхпроводящего спаривания (N/I/Sp). Объяснено наблюдаемое экспериментально как появление пика при нулевом напряжении, так и его расщепление в зависимости от толщины слоя изолятора. В рамках этой же микроскопической теории развит вариант техники решеточной функции Грина в мацубаровом представлении. Используя разработанный подход, рассчитаны фазовые и температурные зависимости тока Джозефсона для контакта сверхпроводника s-типа и многозонного железосодержащего сверхпроводника (ферропниктида) для различных ориентаций границы по отношению к кристаллографическим осям пниктида. | ||||
| Address | Нижний Новгород, Россия | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1834 | |||
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| Author | Samsonova, A. S.; Zolotov, P. I.; Baeva, E. M.; Lomakin, A. I.; Titova, N. A.; Kardakova, A. I.; Goltsman, G. N. | ||||
| Title | Signatures of surface magnetic disorder in niobium films | Type | Journal Article | ||
| Year | 2021 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 31 | Issue | 5 | Pages | 1-5 |
| Keywords |
Nb films | ||||
| Abstract | We present our studies on the evolution of the normal and superconducting properties with thickness of thin Nb films with a low level of non-magnetic disorder ( kFl≈150 for the thickest film in the set). The analysis of the superconducting behavior points to the presence of magnetic moments, hidden in the native oxide on the surface of Nb films. Using the Abrikosov-Gorkov theory, we obtain the density of surface magnetic moments of 1013 cm −2 , which is in agreement with the previously reported data for Nb films. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1792 | |||
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| Author | Корнеев, А. А.; Окунев, О. В.; Чулкова, Г. М.; Смирнов, К. В.; Милостная, И. И.; Минаева, О. В.; Корнеева, Ю. П.; Каурова, Н. С.; Воронов, Б. М.; Гольцман, Г. Н. | ||||
| Title | Спонтанные и фотоиндуцированные резистивные состояния в узких сверхпроводящих NbN полосках | Type | Book Whole | ||
| Year | 2015 | Publication | Abbreviated Journal | ||
| Volume | Issue | Pages | |||
| Keywords |
NbN films | ||||
| Abstract | Монография посвящена актуальной проблеме современной фотоники: разработке высокочувствительных и быстродействующих сверхпроводниковых однофотонных детекторов на основе тонкой пленки NbN. В работе исследуются неравновесные процессы, протекающие в тонкой сверхпроводящей пленке после поглощения инфракрасного фотона и приводящие к возникновению резистивного состояния. На этих процессах основан механизм фотоотклика исследуемого в работе однофотонного детектора. В частности, исследуются зависимости квантовой эффективности и скорости темнового счета от геометрических параметров детектора: толщины пленки, ширины полоски, а также от величины транспортного тока детектора. Монография предназначена для студентов старших курсов, аспирантов и начинающих исследователей, работающих в области сверхпроводниковой наноэлектроники и радиофизики. | ||||
| Address | Москва | ||||
| Corporate Author | Thesis | ||||
| Publisher | МПГУ | Place of Publication | Editor | ||
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| ISSN | ISBN | 978-5-4263-0269-3 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | УДК: 535; Число страниц: 108 | Approved | no | ||
| Call Number | Serial | 1812 | |||
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