Xiaolong Hu, Holzwarth, C. W., Masciarelli, D., Dauler, E. A., & Berggren, K. K. (2009). Efficiently coupling light to superconducting nanowire single-photon detectors. IEEE Trans. Appl. Supercond., 19(3), 336–340.
Abstract: We designed superconducting nanowire single-photon detectors (SNSPDs) integrated with silver optical antennae for free-space coupling and a dielectric waveguide for fiber coupling. According to our finite-element simulation, (1) for the free-space coupling, the absorptance of the NbN nanowire for TM-polarized photons at the wavelength of 1550 nm can be as high as 96% by adding silver optical antennae; (2) for the fiber coupling, the absorptance of the NbN nanowire for TE-like-polarized photons can reach 76% including coupling efficiency at the wavelength of 1550 nm by adding a silicon nitride waveguide and an inverse-taper coupler.
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Kawakami, A., Saito, S., & Hyodo, M. (2011). Fabrication of nano-antennas for superconducting Infrared detectors. IEEE Trans. Appl. Supercond., 21(3), 632–635.
Abstract: To improve the response performance of superconducting infrared detectors, we have developed a fabrication process for nano-antennas. A nano-antenna consists of a dipole antenna, and a superconducting thin film strip placed in the antenna's center. By measuring the transition temperature of the superconducting strips, we confirmed that their superconductivity maintained a good condition after the nano-antenna fabrication process. We also evaluated nano-antenna characteristics using Fourier transform infrared spectroscopy. The evaluated antenna length and width were respectively set at around 2400 nm and 400 nm, and the antennas were placed at intervals of several micrometers around the area of 1 mm2 . In an evaluation of spectral transmission characteristics, clear absorption caused by antenna effects was observed at around 1400 cm-1. High polarization dependencies were also observed.
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Zorin, M., Milostnaya, I., Gol'tsman, G. N., & Gershenzon, E. M. (1997). Fast NbN superconducting switch controlled by optical radiation. IEEE Trans. Appl. Supercond., 7(2), 3734–3737.
Abstract: The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits.
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Zolotov, P., Semenov, A., Divochiy, A., & Goltsman, G. (2021). A comparison of VN and NbN thin films towards optimal SNSPD efficiency. IEEE Trans. Appl. Supercond., 31(5), 1–4.
Abstract: Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance.
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Korneev, A., Matvienko, V., Minaeva, O., Milostnaya, I., Rubtsova, I., Chulkova, G., et al. (2005). Quantum efficiency and noise equivalent power of nanostructured, NbN, single-photon detectors in the wavelength range from visible to infrared. IEEE Trans. Appl. Supercond., 15(2), 571–574.
Abstract: We present our studies on the quantum efficiency (QE) and the noise equivalent power (NEP) of the latest-generation, nanostructured, superconducting, single-photon detectors (SSPDs) in the wavelength range from 0.5 to 5.6 /spl mu/m, operated at temperatures in the 2.0- to 4.2-K range. Our detectors are designed as 4-nm-thick and 100-nm-wide NbN meander-shaped stripes, patterned by electron-beam lithography and cover a 10/spl times/10-/spl mu/m/sup 2/ active area. The best-achieved QE at 2.0 K for 1.55-/spl mu/m photons is 17%, and QE for 1.3-/spl mu/m infrared photons reaches its saturation value of /spl sim/30%. The SSPD NEP at 2.0 K is as low as 5/spl times/10/sup -21/ W/Hz/sup -1/2/. Our nanostructured SSPDs, operated at 2.0 K, significantly outperform their semiconducting counterparts, and, together with their GHz counting rate and picosecond timing jitter, they are devices-of-choice for practical quantum key distribution systems and free-space (even interplanetary) quantum optical communications.
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