toggle visibility Search & Display Options

Select All    Deselect All
 |   | 
Details
   print
  Records Links
Author Peltonen, J. T.; Peng, Z. H.; Korneeva, Yu. P.; Voronov, B. M.; Korneev, A. A.; Semenov, A. V.; Gol'tsman, G. N.; Tsai, J. S; Astafiev, Oleg doi  openurl
  Title Coherent dynamics and decoherence in a superconducting weak link Type Journal Article
  Year 2016 Publication Physic. Rev. B, Abbreviated Journal Physic. Rev. B,  
  Volume 94 Issue Pages 180508  
  Keywords (up)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ akorneev @ Serial 1123  
Permanent link to this record
 

 
Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  doi
openurl 
  Title Room temperature silicon detector for IR range coated with Ag2S quantum dots Type Journal Article
  Year 2019 Publication Phys. Status Solidi RRL Abbreviated Journal Phys. Status Solidi RRL  
  Volume 13 Issue 9 Pages 1900187-(1-6)  
  Keywords (up)  
  Abstract For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6254 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1149  
Permanent link to this record
 

 
Author Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. url  doi
openurl 
  Title Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer Type Journal Article
  Year 2018 Publication Microelectronic Engineering Abbreviated Journal Microelectronic Engineering  
  Volume 195 Issue Pages 26-31  
  Keywords (up)  
  Abstract In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1155  
Permanent link to this record
 

 
Author Divochiy, A.; Misiaszek, M.; Vakhtomin, Y.; Morozov, P.; Smirnov, K.; Zolotov, P.; Kolenderski, P. url  doi
openurl 
  Title Single photon detection system for visible and infrared spectrum range Type Journal Article
  Year 2018 Publication Opt. Lett. Abbreviated Journal Opt. Lett.  
  Volume 43 Issue 24 Pages 6085-6088  
  Keywords (up)  
  Abstract We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452-2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of spontaneous parametric downconversion, where one photon was in the visible range and the other was in the infrared range. We measured a signal to noise ratio as high as 4x10(4) in our detection setting. A photon detection efficiency as high as 64% at 1550 nm and 15% at 2300 nm was observed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0146-9592 ISBN Medium  
  Area Expedition Conference  
  Notes https://arxiv.org/abs/1807.04273 Approved no  
  Call Number Serial 1227  
Permanent link to this record
 

 
Author Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Seleznev, V.; Morozov, P.; Smirnov, K. url  doi
openurl 
  Title Superconducting single-photon detectors made of ultra-thin VN films Type Conference Article
  Year 2018 Publication KnE Energy Abbreviated Journal KnE Energy  
  Volume 3 Issue 3 Pages 83-89  
  Keywords (up)  
  Abstract We optimized technology of thin VN films deposition in order to study VN-based superconducting single-photon detectors. Investigation of the main VN film parameters showed that this material has lower resistivity compared to commonly used NbN. Fabricated from obtained films devices showed 100% intrinsic detection efficiency at 900 nm, at the temperature of 1.7 K starting with the bias current of 0.7·I  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1230  
Permanent link to this record
Select All    Deselect All
 |   | 
Details
   print

Save Citations:
Export Records: