| |
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Population and lifetime of excited states of shallow impurities in Ge |
1979 |
Sov. Phys. JETP |
49 |
355-362 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
1971 |
JETP Lett. |
14 |
185-186 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. |
Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium |
1986 |
Sov. Phys. JETP |
64 |
889-897 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state |
1988 |
Sov. J. Low Temp. Phys. |
14 |
414-420 |
|
|
|
Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Limiting characteristic of fast superconducting bolometers |
1989 |
Sov. Phys.-Tech. Phys. |
34 |
195-199 |
|
