Abstract: Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.

Abstract: In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.

Abstract: Infrared (IR) filters are very important to the efficient operation of cryogenic receivers. Usually, such filters are mounted on the radiation shield of the cryostat to reduce the heat load to the 4 K stage. Insufficient filtering may cause the temperature of the mixing element in a receiver to be excessively warm, leading to degradation in sensitivity. These filters should be effective in blocking the room temperature IR radiation from outside the cryostat, yet should be transparent across the desired signal frequency band. In the Terahertz frequency range, which is close to the infrared, it is difficult to find an inexpensive low- loss material that can provide the required IR blocking capacity. We present transmission measurements, made using a Fourier Transform Spectrometer (FTS), of a number of potential infrared filters between 0.4 and 1.6 THz. The filters tested include the widely-used, Teflon-based, Zitex-A and Zitex-G films, alkali halide based infrared filter, and crystalline quartz coated with Parylene, and polyethylene films.

Abstract: We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.