| Author |
Title |
Year |
Publication |
Volume |
Pages |
| Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
Electron–phonon interaction in disordered conductors |
1999 |
Phys. Rev. B Condens. Matter |
263-264 |
190-192 |
| Sergeev, A.; Mitin, V. |
Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials |
2000 |
Phys. Rev. B. |
61 |
6041-6047 |
| Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
1997 |
Phys. Rev. B |
56 |
10089-10096 |
| Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. |
The electron-phonon relaxation time in thin superconducting titanium nitride films |
2013 |
Appl. Phys. Lett. |
103 |
252602 (1 to 4) |
| Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform |
2019 |
EPJ Web Conf. |
220 |
03012 |
