Records |
Author |
Lusche, R.; Semenov, A.; Ilin, K.; Siegel, M.; Korneeva, Y.; Trifonov, A.; Korneev, A.; Goltsman, G.; Vodolazov, D.; Hübers, H.-W. |
Title |
Effect of the wire width on the intrinsic detection efficiency of superconducting-nanowire single-photon detectors |
Type |
Journal Article |
Year |
2014 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
Volume |
116 |
Issue |
4 |
Pages |
043906 (1 to 9) |
Keywords ![sorted by Keywords field, descending order (down)](img/sort_desc.gif) |
NbN SSPD, SNSPD, TaN |
Abstract |
A thorough spectral study of the intrinsic single-photon detection efficiency in superconducting TaN and NbN nanowires with different widths has been performed. The experiment shows that the cut-off of the intrinsic detection efficiency at near-infrared wavelengths is most likely controlled by the local suppression of the barrier for vortex nucleation around the absorption site. Beyond the cut-off quasi-particle diffusion in combination with spontaneous, thermally activated vortex crossing explains the detection process. For both materials, the reciprocal cut-off wavelength scales linearly with the wire width where the scaling factor agrees with the hot-spot detection model. |
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0021-8979 |
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1357 |
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Author |
Semenov, A. D.; Hübers, H.-W.; Gol’tsman, G. N.; Smirnov, K. |
Title |
Superconducting quantum detector for astronomy and X-ray spectroscopy |
Type |
Conference Article |
Year |
2002 |
Publication |
Proc. Int. Workshop on Supercond. Nano-Electronics Devices |
Abbreviated Journal |
Proc. Int. Workshop on Supercond. Nano-Electronics Devices |
Volume |
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Issue |
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Pages |
201-210 |
Keywords ![sorted by Keywords field, descending order (down)](img/sort_desc.gif) |
NbN SSPD, SNSPD, SQD, superconducting quantum detectors, X-ray spectroscopy |
Abstract |
We propose the novel concept of ultra-sensitive energy-dispersive superconducting quantum detectors prospective for applications in astronomy and X-ray spectroscopy. Depending on the superconducting material and operation conditions, such detector may allow realizing background limited noise equivalent power 10−21 W Hz−1/2 in the terahertz range when exposed to 4-K background radiation or counting of 6-keV photon with almost 10—4 energy resolution. Planar layout and relatively simple technology favor integration of elementary detectors into a detector array. |
Address |
Naples, Italy |
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Springer |
Place of Publication |
Boston, MA |
Editor |
Pekola, J.; Ruggiero, B.; Silvestrini, P. |
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978-1-4615-0737-6 |
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International Workshop on Superconducting Nano-Electronics Devices, May 28-June 1, 2001 |
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no |
Call Number |
semenov2002superconducting |
Serial |
1525 |
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Author |
Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. |
Title |
Electron energy relaxation in disordered superconducting NbN films |
Type |
Journal Article |
Year |
2020 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
Volume |
102 |
Issue |
5 |
Pages |
054501 (1 to 15) |
Keywords ![sorted by Keywords field, descending order (down)](img/sort_desc.gif) |
NbN SSPD, SNSPD, HEB, bandwidth, relaxation time |
Abstract |
We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material. |
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2469-9950 |
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no |
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Serial |
1266 |
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Author |
Semenov, A.; Engel, A.; Il'in, K.; Gol'tsman, G.; Siegel, M.; Hübers, H.-W. |
Title |
Ultimate performance of a superconducting quantum detector |
Type |
Journal Article |
Year |
2003 |
Publication |
Eur. Phys. J. Appl. Phys. |
Abbreviated Journal |
Eur. Phys. J. Appl. Phys. |
Volume |
21 |
Issue |
3 |
Pages |
171-178 |
Keywords ![sorted by Keywords field, descending order (down)](img/sort_desc.gif) |
NbN SSPD, SNSPD |
Abstract |
We analyze the ultimate performance of a superconducting quantum detector in order to meet requirements for applications in near-infrared astronomy and X-ray spectroscopy. The detector exploits a combined detection mechanism, in which avalanche quasiparticle multiplication and the supercurrent jointly produce a voltage response to a single absorbed photon via successive formation of a photon-induced and a current-induced normal hotspot in a narrow superconducting strip. The response time of the detector should increase with the photon energy providing energy resolution. Depending on the superconducting material and operation conditions, the cut-off wavelength for the single-photon detection regime varies from infrared waves to visible light. We simulated the performance of the background-limited infrared direct detector and X-ray photon counter utilizing the above mechanism. Low dark count rate and intrinsic low-frequency cut-off allow for realizing a background limited noise equivalent power of 10−20 W Hz−1/2 for a far-infrared direct detector exposed to 4-K background radiation. At low temperatures, the intrinsic response time of the counter is rather determined by diffusion of nonequilibrium electrons than by the rate of energy transfer to phonons. Therefore, thermal fluctuations do not hamper energy resolution of the X-ray photon counter that should be better than 10−3 for 6-keV photons. Comparison of new data obtained with a Nb based detector and previously reported results on NbN quantum detectors support our estimates of ultimate detector performance. |
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1286-0042 |
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no |
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Serial |
534 |
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Author |
Lusche, R.; Semenov, A.; Korneeva, Y.; Trifonov, A.; Korneev, A.; Gol'tsman, G.; Hübers, H.-W. |
Title |
Effect of magnetic field on the photon detection in thin superconducting meander structures |
Type |
Journal Article |
Year |
2014 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
Volume |
89 |
Issue |
10 |
Pages |
104513 (1 to 7) |
Keywords ![sorted by Keywords field, descending order (down)](img/sort_desc.gif) |
NbN SSPD, SNSPD |
Abstract |
We have studied the influence of an externally applied magnetic field on the photon and dark count rates of meander-type niobium nitride superconducting nanowire single-photon detectors. Measurements have been performed at a temperature of 4.2 K, and magnetic fields up to 250 mT have been applied perpendicularly to the meander plane. While photon count rates are field independent at weak applied fields, they show a strong dependence at fields starting from approximately ±25 mT. This behavior, as well as the magnetic field dependence of the dark count rates, is in good agreement with the recent theoretical model of vortex-assisted photon detection and spontaneous vortex crossing in narrow superconducting lines. However, the local reduction of the superconducting free energy due to photon absorption, which is the fitting parameter in the model, increases much slower with the photon energy than the model predicts. Furthermore, changes in the free-energy during photon counts and dark counts depend differently on the current that flows through the meander. This indicates that photon counts and dark counts occur in different parts of the meander. |
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1098-0121 |
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no |
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1367 |
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Author |
Maingault, L.; Tarkhov, M.; Florya, I.; Semenov, A.; Espiau de Lamaëstre, R.; Cavalier, P.; Gol’tsman, G.; Poizat, J.-P.; Villégier, J.-C. |
Title |
Spectral dependency of superconducting single photon detectors |
Type |
Journal Article |
Year |
2010 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
Volume |
107 |
Issue |
11 |
Pages |
116103 (1 to 3) |
Keywords ![sorted by Keywords field, descending order (down)](img/sort_desc.gif) |
NbN SSPD, SNSPD |
Abstract |
We investigate the effect of varying both incoming optical wavelength and width of NbN nanowires on the superconducting single photon detectors (SSPD) detection efficiency. The SSPD are current biased close to critical value and temperature fixed at 4.2 K, far from transition. The experimental results are found to verify with a good accuracy predictions based on the “hot spot model,” whose size scales with the absorbed photon energy. With larger optical power inducing multiphoton detection regime, the same scaling law remains valid, up to the three-photon regime. We demonstrate the validity of applying a limited number of measurements and using such a simple model to reasonably predict any SSPD behavior among a collection of nanowire device widths at different photon wavelengths. These results set the basis for designing efficient single photon detectors operating in the infrared (2–5 μm range).
This work was supported by European projects FP6 STREP “SINPHONIA” (Contract No. NMP4-CT-2005-16433) and IP “QAP” (Contract No. 15848). |
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0021-8979 |
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no |
Call Number |
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Serial |
1392 |
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Author |
Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N. |
Title |
Picosecond response of a superconducting hot-electron NbN photodetector |
Type |
Journal Article |
Year |
1998 |
Publication |
Appl. Supercond. |
Abbreviated Journal |
Appl. Supercond. |
Volume |
6 |
Issue |
7-9 |
Pages |
423-428 |
Keywords ![sorted by Keywords field, descending order (down)](img/sort_desc.gif) |
NbN SSPD, SNSPD |
Abstract |
The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W. |
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0964-1807 |
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no |
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1584 |
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Author |
Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N. |
Title |
Superconductivity in highly disordered NbN nanowires |
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Journal Article |
Year |
2016 |
Publication |
Nanotechnol. |
Abbreviated Journal |
Nanotechnol. |
Volume |
27 |
Issue |
47 |
Pages |
47lt02 (1 to 8) |
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NbN nanowires |
Abstract |
The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links. |
Address |
National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia |
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English |
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0957-4484 |
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PMID:27782000 |
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no |
Call Number |
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Serial |
1332 |
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Author |
Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
Title |
Gap frequency and photon absorption in a hot electron bolometer |
Type |
Conference Article |
Year |
2016 |
Publication |
Proc. 27th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 27th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages |
121 |
Keywords ![sorted by Keywords field, descending order (down)](img/sort_desc.gif) |
NbN HEB; Si membrane |
Abstract |
The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015. |
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1204 |
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Zhang, W.; Li, N.; Jiang, L.; Ren, Y.; Yao, Q.-J.; Lin, Z.-H.; Shi, S.-C.; Voronov, B. M.; Gol’tsman, G. N. |
Title |
Dependence of noise temperature of quasi-optical superconducting hot-electron bolometer mixers on bath temperature and optical-axis displacement |
Type |
Conference Article |
Year |
2008 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
6840 |
Issue |
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Pages |
684007 (1 to 8) |
Keywords ![sorted by Keywords field, descending order (down)](img/sort_desc.gif) |
NbN HEB mixers, noise temperature, LO power |
Abstract |
It is known that the increase of bath temperature results in the decrease of critical current of superconducting hot-electron bolometer (HEB) mixers owing to the depression of superconductivity, thus leading to the degradation of the mixer’s sensitivity. Here we report our study on the effect of bath temperature on the heterodyne mixing performance of quasi-optical superconducting NbN HEB mixers incorporated with a two-arm log-spiral antenna. The correlation between the bath temperature, critical current, LO power requirement and noise temperature is investigated at 0.5 THz. Furthermore, the heterodyne mixing performance of quasi-optical superconducting NbN HEB mixers is examined while there is an optical-axis displacement between the center of the extended hemispherical silicon lens and the superconducting NbN HEB device, which is placed on the back of the lens. Detailed experimental results and analysis are presented. |
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Spie |
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Zhang, C.; Zhang, X.-C. |
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Terahertz Photonics |
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1415 |
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