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  Author Title Year Publication Volume Pages Links
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. Investigation of population and ionization of donor excited states in Ge 1976 Physics of Semiconductors 631-634 details   url
Gershenzon, E. M.; Goltsman, G. N. Zeeman effect in excited-states of donors in germanium 1972 Sov. Phys. Semicond. 6 509 details   url
Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. Population of excited-states of small admixtures in germanium 1978 Izv. Akad. Nauk SSSR, Seriya Fizicheskaya 42 1154-1159 details   url
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Kinetics of submillimeter impurity and exciton photoconduction in Ge 1982 Optics and Spectroscopy 52 454-455 details   url
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. Capture of free holes by charged acceptors in uniaxially deformed Ge 1988 Fizika i Tekhnika Poluprovodnikov 22 540-543 details   url
Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors 2018 Appl. Phys. Lett. 112 141101 (1 to 5) details   doi
Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. Response of graphene based gated nanodevices exposed to THz radiation 2015 EPJ Web of Conferences 103 10003 (1 to 2) details   doi
Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts 2018 Materials Today: Proc. 5 27301-27306 details   doi
Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. Graphene-based lateral Schottky diodes for detecting terahertz radiation 2018 Proc. Optical Sensing and Detection V 10680 30-39 details   doi
Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency 2019 EPJ Web Conf. 220 02009 details   doi
Elmanov, I.; Sardi, F.; Xia, K.; Kornher, T.; Kovalyuk, V.; Prokhodtsov, A.; An, P.; Kuzin, A.; Elmanova, A.; Goltsman, G.; Kolesov, R. Development of focusing grating couplers for lithium niobate on insulator platform 2020 J. Phys.: Conf. Ser. 1695 012127 details   doi
Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. Limiting characteristic of fast superconducting bolometers 1989 Sov. Phys.-Tech. Phys. 34 195-199 details   url
Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N. Ultrafast superconducting bolometer receivers for terahertz applications 2009 Proc. PIERS 867 details   url
Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N. Temperature dependence of superconducting hot electron bolometers 2013 Not published results: 24th international symposium on space terahertz technology details   openurl
Shurakov, A.; Lobanov, Y.; Goltsman, G. Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications 2015 Supercond. Sci. Technol. 29 023001 details   doi
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