|
Records |
Links |
|
Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
Type |
Conference Article |
|
Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
|
Volume |
|
Issue |
|
Pages |
163-166 |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1603 |
|
Permanent link to this record |
|
|
|
|
Author |
Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Planar Schottky diode with a Γ-shaped anode suspended bridge |
Type |
Conference Article |
|
Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
|
|
Volume |
1695 |
Issue |
|
Pages |
012154 |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
Schottky diode, GaAs, InP substrate |
|
|
Abstract |
In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1742-6588 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1152 |
|
Permanent link to this record |
|
|
|
|
Author |
Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers |
Type |
Journal Article |
|
Year |
2012 |
Publication |
Tech. Phys. |
Abbreviated Journal |
Tech. Phys. |
|
|
Volume |
57 |
Issue |
7 |
Pages |
971-974 |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
semiconducting superlattice frequency multiplier, NbN HEB mixers |
|
|
Abstract |
We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1063-7842 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1378 |
|
Permanent link to this record |
|
|
|
|
Author |
Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Egorov, A. Y.; Knyazev, D. A.; Andrianov, A. V.; Zakhar’in, A. O.; Konnikov, S. G.; Gol’tsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
A weakly coupled semiconductor superlattice as a potential for a radio frequency modulated terahertz light emitter |
Type |
Journal Article |
|
Year |
2012 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
|
|
Volume |
100 |
Issue |
13 |
Pages |
131104 (1 to 4) |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
semiconductor superlattice |
|
|
Abstract |
The bolometer response to THz radiation from a weakly coupled GaAs/AlGaAs superlattice biased in the self-oscillations regime has been observed. The bolometer signal is modulated with the frequency equal to the fundamental frequency of superlattice self-oscillations. The frequency spectrum of the bolometer signal contains higher harmonics whose frequency is a multiple of fundamental frequency of self-oscillations.
This work was supported by State Contracts Nos. 16.740.11.0044 and 16.552.11.7002 of Ministry of Education and Science of the Russian Federation. Structural characterization was made on the equipment of the Joint Research Centre «Material science and characterization in advanced technology» (Ioffe Institute, St. Petersburg, Russia). |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1379 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Submillimeter spectroscopy of semiconductors |
Type |
Journal Article |
|
Year |
1973 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
|
|
Volume |
37 |
Issue |
2 |
Pages |
299-304 |
|
|
Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
|
|
Abstract |
The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1735 |
|
Permanent link to this record |