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Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
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Intense electromagnetic radiation heating of superconductor electrons in resistive state |
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Journal Article |
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1988 |
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Fizika Nizkikh Temperatur |
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Fizika Nizkikh Temperatur |
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14 |
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7 |
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753-763 |
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Nb HEB |
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An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model. |
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1697 |
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Samsonova, A. S.; Zolotov, P. I.; Baeva, E. M.; Lomakin, A. I.; Titova, N. A.; Kardakova, A. I.; Goltsman, G. N. |
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Title |
Signatures of surface magnetic disorder in niobium films |
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Journal Article |
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2021 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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31 |
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5 |
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1-5 |
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Nb films |
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We present our studies on the evolution of the normal and superconducting properties with thickness of thin Nb films with a low level of non-magnetic disorder ( kFl≈150 for the thickest film in the set). The analysis of the superconducting behavior points to the presence of magnetic moments, hidden in the native oxide on the surface of Nb films. Using the Abrikosov-Gorkov theory, we obtain the density of surface magnetic moments of 1013 cm −2 , which is in agreement with the previously reported data for Nb films. |
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1051-8223 |
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1792 |
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Bespalov, A.V.; Gol'tsman, G.N.; Semenov, A.D.; Renk, K.F. |
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Determination of the far-infrared emission characteristic of a cyclotron p-germanium laser by use of a superconducting Nb detector |
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Journal Article |
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1991 |
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Solid State Communications |
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Solid State Communications |
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80 |
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7 |
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503-506 |
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Nb detector, applications |
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We studied the far-infrared emission characteristics of a cyclotron p-germanium laser using a broad-band superconducting Nb film detector. For magnetic fields between ∼25 kOe and ∼50 kOe, emission in a frequency range from ∼50 cm-1 to ∼100 cm-1 with maximum intensity around 90 cm-1 was obtained. We determined, for fixed magnetic fields, electric field dependences of the emission intensity taking into account that the total electric field is a sum of the applied and the Hall electric field. An analysis of the emission intensity characteristic gives evidence that transitions between the two lowest Landau levels of light holes are responsible for the laser action. |
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0038-1098 |
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1677 |
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Arutyunov, K. Y.; Ramos-Álvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol’tsman, G. N. |
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Quasi-1-dimensional superconductivity in highly disordered NbN nanowires |
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Miscellaneous |
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2016 |
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arXiv |
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narrow NbN nanowires, BCS |
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The topic of superconductivity in strongly disordered materials has attracted a significant attention. In particular vivid debates are related to the subject of intrinsic spatial inhomogeneity responsible for non-BCS relation between the superconducting gap and the pairing potential. Here we report experimental study of electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. We find that conventional models based on phase slip concept provide reasonable fits for the shape of the R(T) transition curve. Temperature dependence of the critical current follows the text-book Ginzburg-Landau prediction for quasi-one-dimensional superconducting channel Ic~(1-T/Tc)^3/2. Hence, one may conclude that the intrinsic electronic inhomogeneity either does not exist in our structures, or, if exist, does not affect their resistive state properties. |
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Duplicated as 1332 |
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1338 |
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Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
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Integration of nanodiamonds with NV-centers on optical silicon nitride structures |
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Conference Article |
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2019 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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220 |
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03013 |
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nanodiamonds, NV-centers, Si3N4 |
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In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources. |
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2100-014X |
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1190 |
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