| Records |
| Author |
Steudle, Gesine A.; Schietinger, Stefan; Höckel, David; Dorenbos, Sander N.; Zadeh, Iman E.; Zwiller, Valery; Benson, Oliver |
| Title |
Measuring the quantum nature of light with a single source and a single detector |
Type |
Journal Article |
| Year |
2012 |
Publication |
Phys. Rev. A |
Abbreviated Journal |
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| Volume |
86 |
Issue |
5 |
Pages |
053814 |
Keywords  |
SSPD, SNSPD, saturation count rates, dead time, dynamic range |
| Abstract |
An elementary experiment in optics consists of a light source and a detector. Yet, if the source generates nonclassical correlations such an experiment is capable of unambiguously demonstrating the quantum nature of light. We realized such an experiment with a defect center in diamond and a superconducting detector. Previous experiments relied on more complex setups, such as the Hanbury Brown and Twiss configuration, where a beam splitter directs light to two photodetectors, creating the false impression that the beam splitter is a fundamentally required element. As an additional benefit, our results provide a simplification of the widely used photon-correlation techniques. |
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| Publisher |
American Physical Society |
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1089 |
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| Author |
Manus, M. K. Mc; Kash, J. A.; Steen, S. E.; Polonsky, S.; Tsang, J.C.; Knebel, D. R.; Huott, W. |
| Title |
PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis |
Type |
Journal Article |
| Year |
2000 |
Publication |
Microelectronics Reliability |
Abbreviated Journal |
Microelectronics Reliability |
| Volume |
40 |
Issue |
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Pages |
1353-1358 |
| Keywords |
SSPD, CMOS testing |
| Abstract |
Normal operation of complementary metal-oxide semiconductor (CMOS) devices entails the emission of picosecond pulses of light, which can be used to diagnose circuit problems. The pulses that are observed from submicron sized field effect transistors (FETs) are synchronous with logic state switching. Picosecond Imaging Circuit Analysis (PICA), a new optical imaging technique combining imaging with timing, spatially resolves individual devices at the 0.5 micron level and switching events on a 10 picosecond timescale. PICA is used here for the diagnostics of failures on two VLSI microprocessors. |
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1054 |
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| Author |
Stellari, Franco; Song, Peilin |
| Title |
Testing of ultra low voltage CMOS microprocessors using the superconducting single-photon detector (SSPD) |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. 12th IPFA |
Abbreviated Journal |
Proc. 12th IPFA |
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Issue |
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Pages |
2 |
| Keywords |
SSPD, CMOS testing |
| Abstract |
In F. Stellari and P. Song (2004) the authors have shown a comparison among different detectors used for diagnosing integrated circuits (ICs) by means of the PICA method. In their experiments they used two versions of the SSPD detector (p-SSPD is a prototype version, while c-SSPD is the first commercially available generation of the detector as presented in W. K. Lo et al. (2002), as well as the imaging detector (S-25 photo-multiplier tube (PMT) as discussed in W. G. McMullan (1987)) used in the conventional PICA technique. A microprocessor chip fabricated in a 0.13 μm 1.2 V technology is used to show that c-SSPD provides a significant reduction in acquisition time for the collection of optical waveforms from chips running at very low. In this paper, the authors summarize the main results. |
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IEEE |
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0-7803-9301-5 |
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1055 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
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Conference Article |
| Year |
2019 |
Publication |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
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Issue |
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Pages |
369-371 |
| Keywords |
silicon detector, quantum dot, IR, surface states |
| Abstract |
For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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978-5-89513-451-1 |
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1154 |
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| Author |
Bell, Matthew; Sergeev, Andrei; Goltsman, Gregory; Bird, Jonathan; Verevkin, Aleksandr |
| Title |
Transition-edge sensors based on superconducting nanowires |
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Abstract |
| Year |
2006 |
Publication |
Proc. APS March Meeting |
Abbreviated Journal |
Proc. APS March Meeting |
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Issue |
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Pages |
B38.00001 |
| Keywords |
NbN nanowire TES |
| Abstract |
We present our experimental study of superconducting NbN nanowire-based sensor. The responsivity of the sensor is strongly affected by the superconducting transition width of the nanostructure, which, in turn, is determined by the phase slip centers (PCSs) dynamics. The fluctuations and noise properties of the sensor are also discussed, as well as the devices' behavior at high magnetic fields. The ultimate performance of the sensor and prospects of the devices will be discussed, as well. |
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