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Vachtomin, Y. B.; Antipov, S. V.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
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Title |
Noise temperature measurements of NbN phonon-cooled hot electron bolometer mixer at 2.5 and 3.8 THz |
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2004 |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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236-241 |
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HEB mixer, NbN, direct detection effect |
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We present the results of noise temperature measurements of NbN phonon-cooled HEB mixers based on a 3.5 nm NbN film deposited on a high-resistivity Si substrate with a 200 nm – thick MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 µm x 0.2 µm active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. We also present the results of direct detection contribution to the measured Y-factor and of a possible error of noise temperature calculation. This error was more than 8% for the mixer with in-plane dimensions of 2.4 x 0.16 µm 2 at the optimal noise temperature point. The use of a mesh filter enabled us to avoid the effect of direct detection and decrease optical losses by 0.5 dB. The paper is concluded by the investigation results of the mixer polarization response. It was shown that the polarization can differ from the circular one at 3.8 THz by more than 2 dB. |
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Northampton, Massachusetts, USA |
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344 |
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Kroug, M.; Cherednichenko, S.; Choumas, M.; Merkel, H.; Kollberg, E.; Hübers, H.-W.; Richter, H.; Loudkov, D.; Voronov, B.; Gol'Tsman, G. |
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HEB quasi-optical heterodyne receiver for THz frequencies |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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244-252 |
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HEB mixer, NbN, MgO, conversion gain bandwidth, noise temperature |
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San Diego, CA, USA |
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319 |
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Prober, D. E. |
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Superconducting terahertz mixer using a transition-edge microbolometer |
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1993 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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62 |
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17 |
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2119-2121 |
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HEB mixer, NbN, TES |
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Recommended by Klapwijk |
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244 |
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Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman |
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Characterization of the electron energy relaxation process in NbN hot-electron devices |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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390-397 |
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HEB mixers, SSPD, SNSPD, NbN films, Nb films |
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We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth. |
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1576 |
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Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Goltsman, G. N. |
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Fabrication and characterisation of NbN HEB mixers with in situ gold contacts |
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2008 |
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Proc. 19th Int. Symp. Space Terahertz Technol. |
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Proc. 19th Int. Symp. Space Terahertz Technol. |
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62-67 |
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HEB, mixer, NbN, in-situ contacts |
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We present our recent results of the fabrication and testing of NbN hot-electron bolometer mixers with in situ gold contacts. An intermediate frequency bandwidth of about 6 GHz has been measured for the mixers made of a 3.5-nm NbN film on a plane Si substrate with in situ gold contacts, compared to 3.5 GHz for devices made of the same film with ex situ gold contacts. The increase in the intermediate frequency bandwidth is attributed to additional diffusion cooling through the improved contacts, which is further supported by the its dependence on the bridge length: intermediate frequency bandwidths of 3.5 GHz and 6 GHz have been measured for devices with lengths of 0.35 μm and 0.16 μm respectively at a local oscillator frequency of 300 GHz near the superconducting transition. At a local oscillator frequency of 2.5 THz the receiver has offered a DSB noise temperature of 950 K. When compared to the previous result of 1300 K obtained at the same local oscillator frequency for devices fabricated with an ex situ route, such a low value of the noise temperature may also be attributed to the improved gold contacts. |
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Groningen, Netherlands |
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