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Author Shah, Nayana; Pekker, David; Goldbart, Paul M. doi  openurl
  Title Inherent stochasticity of superconductor-resistor switching behavior in nanowires Type Journal Article
  Year 2008 Publication Phys. Rev. Lett. Abbreviated Journal Phys. Rev. Lett.  
  Volume 101 Issue Pages 207001(1 to 4)  
  Keywords (down) superconducting nanowires, phase-slip, self-heating effect, temperature profile  
  Abstract We study the stochastic dynamics of superconductive-resistive switching in hysteretic current-biased superconducting nanowires undergoing phase-slip fluctuations. We evaluate the mean switching time using the master-equation formalism, and hence obtain the distribution of switching currents. We find that as the temperature is reduced this distribution initially broadens; only at lower temperatures does it show the narrowing with cooling naively expected for phase slips that are thermally activated. We also find that although several phase-slip events are generally necessary to induce switching, there is an experimentally accessible regime of temperatures and currents for which just one single phase-slip event is sufficient to induce switching, via the local heating it causes.  
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  Call Number Serial 919  
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Author Pekker, David; Shah, Nayana; Sahu, Mitrabhanu; Bezryadin, Alexey; Goldbart, Paul M. doi  openurl
  Title Stochastic dynamics of phase-slip trains and superconductive-resistive switching in current-biased nanowires Type Journal Article
  Year 2009 Publication Phys. Rev. B Abbreviated Journal  
  Volume 80 Issue Pages 214525 (1 to 17)  
  Keywords (down) superconducting nanowire, phase-slip, order parameter, HEB distributed model, HEB model  
  Abstract Superconducting nanowires fabricated via carbon-nanotube templating can be used to realize and study quasi-one-dimensional superconductors. However, measurement of the linear resistance of these nanowires have been inconclusive in determining the low-temperature behavior of phase-slip fluctuations, both quantal and thermal. Thus, we are motivated to study the nonlinear current-voltage characteristics in current-biased nanowires and the stochastic dynamics of superconductive-resistive switching, as a way of probing phase-slip events. In particular, we address the question: can a single phase-slip event occurring somewhere along the wire—during which the order-parameter fluctuates to zero—induce switching, via the local heating it causes? We explore this and related issues by constructing a stochastic model for the time evolution of the temperature in a nanowire whose ends are maintained at a fixed temperature. We derive the corresponding master equation as a tool for evaluating and analyzing the mean switching time at a given value of current (smaller than the depairing critical current). The model indicates that although, in general, several phase-slip events are necessary to induce switching via a thermal runaway, there is indeed a regime of temperatures and currents in which a single event is sufficient. We carry out a detailed comparison of the results of the model with experimental measurements of the distribution of switching currents, and provide an explanation for the rather counterintuitive broadening of the distribution width that is observed upon lowering the temperature. Moreover, we identify a regime in which the experiments are probing individual phase-slip events, and thus offer a way of unearthing and exploring the physics of nanoscale quantum tunneling of the one-dimensional collective quantum field associated with the superconducting order parameter.  
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  Notes Recommended by Klapwijk Approved no  
  Call Number Serial 923  
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Author Romijn, J.; Klapwijk, T. M.; Renne, M. J.; Mooij, J. E. doi  openurl
  Title Critical pair-breaking current in superconducting aluminum strips far below Tc Type Journal Article
  Year 1982 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 26 Issue 7 Pages 3648-3655  
  Keywords (down) superconducting nanowire  
  Abstract Critical currents of narrow, thin aluminum strips have been measured as a function of temperature. For the smallest samples uniformity of the current density is obtained over a large temperature range. Hence the intrinsic limit on the currentcarrying capacity of the superconductor was measured outside the Ginzburg-Landau -regime. The experimental values are compared with recent theoretical predictions by Kupriyanov and Lukichev. An approximate method of solving their equations is given, the results of which agree with the exact solution to within 1%. Experimental data are in excellent agreement with theoretical predictions. The absolute values agree if one assumes a ρl value of 4×10–16 Ωm2 with vF=1.3×106 m/s. This value for ρl is the same as that found from measurements of the anomalous skin effect but differs from values extracted from size-effect-limited resistivity.  
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  Notes Recommended by Klapwijk Approved no  
  Call Number Serial 925  
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Author Coumou, P. C. J. J.; Driessen, E. F. C.; Bueno, J.; Chapelier, C.; Klapwijk, T. M. url  doi
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  Title Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films Type Journal Article
  Year 2013 Publication Phys. Rev. B Abbreviated Journal  
  Volume 88 Issue 18 Pages 180505 (1 to 5)  
  Keywords (down) strongly disordered superconducting TiN films, microwave resonators  
  Abstract We have studied the electrodynamic response of strongly disordered superconducting TiN films using microwave resonators, where the disordered superconductor is the resonating element in a high-quality superconducting environment of NbTiN. We describe the response assuming an effective pair-breaking mechanism modifying the density of states and compare this to local tunneling spectra obtained using scanning tunneling spectroscopy. For the least disordered film (kFl=8.7, Rs=13Ω), we find good agreement, whereas for the most disordered film (kFl=0.82, Rs=4.3kΩ), there is a strong discrepancy, which signals the breakdown of a model based on uniform properties.  
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  Call Number Serial 1069  
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Author Bulaevskii, L. N.; Graf, Matthias J.; Kogan, V. G. openurl 
  Title Vortex-assisted photon counts and their magnetic field dependence in single-photon superconducting detectors Type Journal Article
  Year 2012 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 85 Issue 1 Pages 9  
  Keywords (down) SSPD; SNSPD; single-vortex crossing; normal-state belt  
  Abstract We argue that photon counts in a superconducting nanowire single-photon detector (SNSPD) are caused by the transition from a current-biased metastable superconducting state to the normal state. Such a transition is triggered by vortices crossing the thin and narrow superconducting strip from one edge to another due to the Lorentz force. Detector counts in SNSPDs may be caused by three processes: (a) a single incident photon with sufficient energy to break enough Cooper pairs to create a normal-state belt across the entire width of the strip (direct photon count), (b) thermally induced single-vortex crossing in the absence of photons (dark count), which at high-bias currents releases the energy sufficient to trigger the transition to the normal state in a belt across the whole width of the strip, and (c) a single incident photon of insufficient energy to create a normal-state belt but initiating a subsequent single-vortex crossing, which provides the rest of the energy needed to create the normal-state belt (vortex-assisted single-photon count). We derive the current dependence of the rate of vortex-assisted photon counts. The resulting photon count rate has a plateau at high currents close to the critical current and drops as a power law with high exponent at lower currents. While the magnetic field perpendicular to the film plane does not affect the formation of hot spots by photons, it causes the rate of vortex crossings (with or without photons) to increase. We show that by applying a magnetic field one may characterize the energy barrier for vortex crossings and identify the origin of dark counts and vortex-assisted photon counts.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 733  
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