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Author Gol'tsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Smirnov, Konstantin V.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M.
Title NbN phonon-cooled hot-electron bolometer mixer for terahertz heterodyne receivers Type Conference Article
Year 2005 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 5727 Issue Pages 95-106
Keywords (down) NbN HEB mixers
Abstract We present the results of our studies of NbN phonon-cooled HEB mixers at terahertz frequencies. The mixers were fabricated from NbN film deposited on a high-resistivity Si substrate with an MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 x 0.2 μm2 active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. The largest gain bandwidth of 5.2 GHz was achieved for a mixer based on 2 nm thick NbN film deposited on MgO layer over Si substrate. The gain bandwidth of the mixer based on 3.5 nm NbN film deposited on Si with MgO is 4.2 GHz and the noise bandwidth for the same device amounts to 5 GHz. We also present the results of our research into decrease of the direct detection contribution to the measured Y-factor and a possible error of noise temperature calculation. The use of a square nickel cell mesh as an IR-filter enabled us to avoid the effect of direct detection and measure apparent value of the noise temperature which was 16% less than that obtained using conventional black polyethylene IR-filter.
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Area Expedition Conference Terahertz and Gigahertz Electronics and Photonics IV
Notes Approved no
Call Number Serial 378
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Author Gol'tsman, G. N.; Karasik, B. S.; Okunev, O. V.; Dzardanov, A. L.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.
Title NbN hot electron superconducting mixers for 100 GHz operation Type Journal Article
Year 1995 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 5 Issue 2 Pages 3065-3068
Keywords (down) NbN HEB mixers
Abstract NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K.
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ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes About LO power required Approved no
Call Number Serial 255
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Author Semenov, Alexei; Richter, Heiko; Smirnov, Konstantin; Voronov, Boris; Gol'tsman, Gregory; Hübers, Heinz-Wilhelm
Title The development of terahertz superconducting hot-electron bolometric mixers Type Journal Article
Year 2004 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 17 Issue 5 Pages 436-439
Keywords (down) NbN HEB mixers
Abstract We present recent advances in the development of NbN hot-electron bolometric (HEB) mixers for flying terahertz heterodyne receivers. Three important issues have been addressed: the quality of the source NbN films, the effect of the bolometer size on the spectral properties of different planar feed antennas, and the local oscillator (LO) power required for optimal operation of the mixer. Studies of the NbN films with an atomic force microscope indicated a surface structure that may affect the performance of the smallest mixers. Measured spectral gain and noise temperature suggest that at frequencies above 2.5 THz the spiral feed provides better overall performance than the double-slot feed. Direct measurements of the optimal LO power support earlier estimates made in the framework of the uniform mixer model.
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Area Expedition Conference
Notes Approved no
Call Number Serial 357
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Author Kroug, M.; Yagoubov, P.; Gol'tsman, G.; Kollberg, E.
Title NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies Type Conference Article
Year 1997 Publication Inst. Phys. Conf. Ser. Abbreviated Journal Inst. Phys. Conf. Ser.
Volume 1 Issue Pages 405-408
Keywords (down) NbN HEB mixers
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Address Veldhoven
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Summary Language Original Title
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Series Volume Series Issue Edition
ISSN 0951-3248 ISBN Medium
Area Expedition Conference 3rd Eur. Conf. on Applied Superconductivity
Notes Approved no
Call Number Serial 1600
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Author Merkel, H. F.; Yagoubov, P. A.; Kroug, M.; Khosropanah, P.; Kollberg, E. L.; Gol’tsman, G. N.; Gershenzon, E. M.
Title Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies Type Conference Article
Year 1998 Publication Proc. 28th European Microwave Conf. Abbreviated Journal Proc. 28th European Microwave Conf.
Volume 1 Issue Pages 294-299
Keywords (down) NbN HEB mixers
Abstract In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point.
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Area Expedition Conference 28th European Microwave Conference
Notes Approved no
Call Number Serial 1580
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