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Author Smirnov, K.; Moshkova, M.; Antipov, A.; Morozov, P.; Vakhtomin, Y.
Title The cascade switching of the photon number resolving superconducting single-photon detectors Type Journal Article
Year 2021 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 31 Issue 2 Pages 1-4
Keywords (up) PNR SSPD, SNSPD
Abstract In this article, present the first detailed study of cascade switching in superconducting photon number resolving detectors. The detectors were made in the form of four parallel nanowires, coupled with the single-mode optical fiber and mounted into a closed-cycle refrigerator with a temperature of 2.1 K. We found out the value of additional false pulses (N cas.sw. ) appearing due to cascade switching and showed that it is possible to set up the detector bias current that corresponds to a high level of the detection efficiency and a low level of N cas.sw. simultaneously. We reached the detection efficiency of 60% and N cas.sw. = 0.3%.
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ISSN 1051-8223 ISBN Medium
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Call Number Serial 1796
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Author Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A.
Title Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 9 Issue 2 Pages 3216-3219
Keywords (up) RSFQ, NbN, SIS
Abstract A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches).
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Call Number Serial 1081
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Author Gupta, D.; Kadin, A. M.
Title Single-photon-counting hotspot detector with integrated RSFQ readout electronics Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 9 Issue 2 Pages 4487-4490
Keywords (up) RSFQ, SSPD, SNSPD
Abstract Absorption of an infrared photon in an ultrathin film (such as 10-nm NbN) creates a localized nonequilibrium hotspot on the submicron length scale and sub-ns time scale. If a strip /spl sim/1 /spl mu/m wide is biased in the middle of the superconducting transition, this hotspot will lead to a resistance pulse with amplitude proportional to the energy of the incident photon. This resistance pulse, in turn, can be converted to a current pulse and inductively coupled to a SQUID amplifier with a digitized output, operating at 4 K or above. A preliminary design analysis indicates that this data can be processed on-chip, using ultrafast RSFQ digital circuits, to obtain a sensitive infrared detector for wavelengths up to 10 /spl mu/m and beyond, with bandwidth of 1 GHz, that counts individual photons and measures their energy with 25 meV resolution. This proposed device combines the speed of a hot-electron bolometer with the single-photon-counting ability of a transition-edge microcalorimeter, to obtain an infrared detector with sensitivity, speed, and spectral selectivity that are unmatched by any alternative technology.
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Notes Approved no
Call Number Serial 1080
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Author Koshelets, V.P.; Dmitriev, P.N.; Ermakov, A.B.; Sobolev, A.S.; Torgashin, M.Y.; Kurin, V.V.; Pankratov, A.L.; Mygind, J.
Title Optimization of the phase-locked flux-flow oscillator for the submm integrated receiver Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 15 Issue 2 Pages 964-967
Keywords (up) SIR
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ISSN 1051-8223 ISBN Medium
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Notes Approved no
Call Number Serial 515
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Author Koshelets, V. P.; Shitov, S. V.; Ermakov, A. B.; Filippenko, L. V.; Koryukin, O. V.; Khudchenko, A. V.; Torgashin, M. Yu.; Yagoubov, P. A.; Hoogeveen, R. W. M.; Pylypenko, O. M.
Title Superconducting integrated receiver for TELIS Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 15 Issue 2 Pages 960-963
Keywords (up) SIR
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ISSN 1051-8223 ISBN Medium
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Notes Approved no
Call Number Serial 517
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