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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
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Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
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1997 |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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163-166 |
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S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN |
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1603 |
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Chuprina, I. N.; An, P. P.; Zubkova, E. G.; Kovalyuk, V. V.; Kalachev, A. A.; Gol'tsman, G. N. |
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Title |
Optimisation of spontaneous four-wave mixing in a ring microcavity |
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Conference Article |
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2017 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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47 |
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10 |
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887-891 |
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ring microcavity |
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Abstract. A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the disper- sion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numeri- cal calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: com- pletely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable. |
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RPLAB @ kovalyuk @ |
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1142 |
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Korneev, A.; Divochiy, A.; Tarkhov, M.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Gol'tsman, G. |
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Title |
New advanced generation of superconducting NbN-nanowire single-photon detectors capable of photon number resolving |
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Conference Article |
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2008 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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97 |
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012307 (1 to 6) |
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PNR SSPD; SNSPD |
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We present our latest generation of ultrafast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). We have developed, fabricated and tested a multi-sectional design of NbN nanowire structures. The novel SSPD structures consist of several meander sections connected in parallel, each having a resistor connected in series. The novel SSPDs combine 10 μm × 10 μm active areas with a low kinetic inductance and PNR capability. That resulted in a significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector's response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performances of the PNR SSPDs. The PNR SSPDs are perfectly suited for fibreless free-space telecommunications, as well as for ultrafast quantum cryptography and quantum computing. |
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1742-6596 |
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1245 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
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Title |
Energy spectrum of acceptors in germanium and its response to a magnetic field |
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Journal Article |
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1977 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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45 |
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4 |
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769-776 |
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p-Ge, photoconductivity, energy spectrum, magnetic field |
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We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression. |
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1727 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
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Observation of free carrier resonances in p-type germanium at submillimeter wavelengths |
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Journal Article |
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1978 |
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Sov. Phys. Solid State |
Abbreviated Journal |
Sov. Phys. Solid State |
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20 |
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4 |
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573-579 |
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p-Ge, free carriers, resonances |
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The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions. |
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1721 |
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Beck, M.; Rousseau, I.; Klammer, M.; Leiderer, P.; Mittendorff, M.; Winnerl, S.; Helm, M.; Gol'tsman, G.N.; Demsar, J. |
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Transient increase of the energy gap of superconducting NbN thin films excited by resonant narrow-band terahertz pulses |
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Journal Article |
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2013 |
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Phys. Rev. Lett. |
Abbreviated Journal |
Phys. Rev. Lett. |
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110 |
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26 |
Pages |
267003 (1 to 5) |
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NbN thin films, energy gap |
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Observations of radiation-enhanced superconductivity have thus far been limited to a few type-I superconductors (Al, Sn) excited at frequencies between the inelastic scattering rate and the superconducting gap frequency 2Delta/h. Utilizing intense, narrow-band, picosecond, terahertz pulses, tuned to just below and above 2Delta/h of a BCS superconductor NbN, we demonstrate that the superconducting gap can be transiently increased also in a type-II dirty-limit superconductor. The effect is particularly pronounced at higher temperatures and is attributed to radiation induced nonthermal electron distribution persisting on a 100 ps time scale. |
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Department of Physics and Center for Applied Photonics, University of Konstanz, D-78457, Germany |
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0031-9007 |
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PMID:23848912 |
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1370 |
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Beck, M.; Klammer, M.; Lang, S.; Leiderer, P.; Kabanov, V. V.; Gol'tsman, G. N.; Demsar, J. |
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Energy-gap dynamics of superconducting NbN thin films studied by time-resolved terahertz spectroscopy |
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2011 |
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Phys. Rev. Lett. |
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Phys. Rev. Lett. |
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107 |
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17 |
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4 |
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NbN thin film, energy gap dynamics |
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Using time-domain terahertz spectroscopy we performed direct studies of the photoinduced suppression and recovery of the superconducting gap in a conventional BCS superconductor NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the bare quasiparticle recombination rate, the Cooper pair-breaking rate and the electron-phonon coupling constant, λ=1.1±0.1, which is in excellent agreement with theoretical estimates. |
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RPLAB @ gujma @ |
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641 |
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Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M. |
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Fast NbN superconducting switch controlled by optical radiation |
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1997 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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7 |
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2 |
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3734-3737 |
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NbN superconducting switch |
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The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits. |
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1596 |
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Sclafani, M.; Marksteiner, M.; Keir, F. M. L.; Divochiy, A.; Korneev, A.; Semenov, A.; Gol'tsman, G.; Arndt, M. |
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Sensitivity of a superconducting nanowire detector for single ions at low energy |
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2012 |
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Nanotechnol. |
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Nanotechnol. |
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23 |
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6 |
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065501 (1 to 5) |
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NbN SSPD, SNSPD, superconducting single ion detector, SSID, SNSID |
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We report on the characterization of a superconducting nanowire detector for ions at low kinetic energies. We measure the absolute single-particle detection efficiency eta and trace its increase with energy up to eta = 100%. We discuss the influence of noble gas adsorbates on the cryogenic surface and analyze their relevance for the detection of slow massive particles. We apply a recent model for the hot-spot formation to the incidence of atomic ions at energies between 0.2 and 1 keV. We suggest how the differences observed for photons and atoms or molecules can be related to the surface condition of the detector and we propose that the restoration of proper surface conditions may open a new avenue for SSPD-based optical spectroscopy on molecules and nanoparticles. |
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Vienna Center for Quantum Science and Technology, Faculty of Physics, University of Vienna, Vienna, Austria |
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PMID:22248823 |
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1380 |
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Lipatov, A.; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Kouminov, P.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
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An ultrafast NbN hot-electron single-photon detector for electronic applications |
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2002 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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15 |
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12 |
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1689-1692 |
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NbN SSPD, SNSPD, QE, jitter, dark counts |
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We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm. |
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