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Author Sidorova, Maria V.; Divochiy, Alexander; Vakhtomin, Yury B.; Smirnov, Konstantin V.
Title Ultrafast superconducting single-photon detector with reduced-size active area coupled to a tapered lensed single-mode fiber Type Conference Article
Year 2015 Publication Proc. SPIE Abbreviated Journal
Volume 9504 Issue Pages 950408 (1 to 9)
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Corporate Author Thesis
Publisher Place of Publication Editor International Society for Optics and Photonics
Language Summary Language Original Title
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Notes Approved no
Call Number RPLAB @ sasha @ sidorova2015ultrafast Serial 1051
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Author Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V.
Title Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system Type Conference Article
Year 2017 Publication EPJ Web of Conferences Abbreviated Journal EPJ Web of Conferences
Volume 132 Issue 2 Pages 2
Keywords (up)
Abstract Recently bright-light control of the SSPD has been

demonstrated. This attack employed a “backdoor” in the detector biasing

scheme. Under bright-light illumination, SSPD becomes resistive and

remains “latched” in the resistive state even when the light is switched off.

While the SSPD is latched, Eve can simulate SSPD single-photon response

by sending strong light pulses, thus deceiving Bob. We developed the

experimental setup for investigation of a dependence on latching threshold

of SSPD on optical pulse length and peak power. By knowing latching

threshold it is possible to understand essential requirements for

development countermeasures against blinding attack on quantum key

distribution system with SSPDs.
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Notes Approved no
Call Number RPLAB @ kovalyuk @ Serial 1116
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Author Peltonen, J. T.; Peng, Z. H.; Korneeva, Yu. P.; Voronov, B. M.; Korneev, A. A.; Semenov, A. V.; Gol'tsman, G. N.; Tsai, J. S; Astafiev, Oleg
Title Coherent dynamics and decoherence in a superconducting weak link Type Journal Article
Year 2016 Publication Physic. Rev. B, Abbreviated Journal Physic. Rev. B,
Volume 94 Issue Pages 180508
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Notes Approved no
Call Number RPLAB @ akorneev @ Serial 1123
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Author Wördenweber, Roger; Moshchalkov, Victor; Bending, Simon; Tafuri, Francesco (eds)
Title Superconductors at the nanoscale. From basic research to applications Type Book Whole
Year 2017 Publication Abbreviated Journal
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Publisher Walter de Gruyter GmbH Place of Publication Berlin/Boston Editor Wördenweber, Roger; Moshchalkov, Victor; Bending, Simon; Tafuri, Francesco
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 978-3-11-045620-2 Medium
Area Expedition Conference
Notes Page shift = 14 Approved no
Call Number Serial 1139
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Author Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G.
Title Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer Type Journal Article
Year 2018 Publication Microelectronic Engineering Abbreviated Journal Microelectronic Engineering
Volume 195 Issue Pages 26-31
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Abstract In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.
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ISSN 0167-9317 ISBN Medium
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Notes Approved no
Call Number Serial 1155
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