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Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. |
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Title |
Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder |
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2019 |
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Phys. Rev. Applied |
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Phys. Rev. Applied |
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12 |
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5 |
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054001 |
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epitaxial TiN films |
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Abstract |
We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films. |
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2331-7019 |
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1166 |
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Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. |
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Title |
Tunnel field-effect transistors for sensitive terahertz detection |
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Journal Article |
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2021 |
Publication |
Nat. Commun. |
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Nat. Commun. |
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12 |
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1 |
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543 |
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field-effect transistors, bilayer graphene, BLG |
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The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor. |
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Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu |
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2041-1723 |
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PMID:33483488; PMCID:PMC7822863 |
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1261 |
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Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
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Title |
Investigation of excited donor states in GaAs |
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1974 |
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Sov. Phys. Semicond. |
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Sov. Phys. Semicond. |
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7 |
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10 |
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1248-1250 |
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GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. |
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Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations |
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Journal Article |
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2019 |
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AIP Advances |
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AIP Advances |
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9 |
Issue |
10 |
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105220 |
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Keywords |
GaAs/AlGaAs superlattice, SL, NbN HEB |
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Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level. |
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2158-3226 |
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1274 |
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Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Kovalyuk, V. V.; Gorshkov, K. N.; Kazakov, A. Y.; Ivanov, S. Y.; Egorov, A. Y.; Sakseev, D. A.; Konnikov, S. G. |
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Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices |
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2011 |
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Tech. Phys. |
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Tech. Phys. |
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56 |
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6 |
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826-830 |
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Keywords |
GaAs/AlGaAs superlattices |
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The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation. |
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1063-7842 |
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1214 |
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