| Records |
| Author |
Золотов, Ф. И.; Смирнов, К. В. |
| Title |
Особенности осаждения разупорядоченных сверхтонких плёнок нитрида ванадия |
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Conference Article |
| Year |
2019 |
Publication |
Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского |
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Pages |
204-205 |
Keywords  |
VN films |
| Abstract |
В работе изучены особенности роста сверхтонких плёнок нитрида ванадия толщиной ~10 нм. Обнаружено, что при изменении температуры подложки и общего давления газов в процессе осаждения плёнок меняется значение их поверхностного сопротивления вблизи перехода к сверхпроводящему состоянию. |
| Address |
Москва |
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МИЭМ НИУ ВШЭ |
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Russian |
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1805 |
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Райтович, А. А.; Пентин, И. В.; Золотов, Ф. И.; Селезнев, В. А.; Вахтомин, Ю. Б.; Смирнов, К. В. |
| Title |
Время энергетической релаксации электронов в сверхпроводниковых VN наноструктурах |
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Conference Article |
| Year |
2018 |
Publication |
Сборник трудов 13 Всероссийской конференции молодых ученых |
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236-238 |
| Keywords |
VN films |
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Саратовский филиал ИРЭ им. В.А. Котельникова РАН |
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Техно-Декор |
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Russian |
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Наноэлектроника, нанофотоника и нелинейная физика |
| Notes |
http://nnnph.ru/data/documents/Sborni-trudov-NNNF-2018.pdf |
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1807 |
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Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. |
| Title |
Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца |
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Journal Article |
| Year |
1985 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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19 |
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9 |
Pages |
1696-1698 |
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uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation |
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1760 |
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Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
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Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
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Journal Article |
| Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
| Volume |
73 |
Issue |
1 |
Pages |
44-47 |
| Keywords |
uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
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The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
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0021-3640 |
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no |
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1752 |
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| Author |
Bell, M.; Sergeev, A.; Mitin, V.; Bird, J.; Verevkin, A.; Gol’tsman, G. |
| Title |
One-dimensional resistive states in quasi-two-dimensional superconductors: Experiment and theory |
Type |
Journal Article |
| Year |
2007 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
76 |
Issue |
9 |
Pages |
094521 (1 to 5) |
| Keywords |
uasi-two-dimensional superconductors, NbN |
| Abstract |
We investigate competition between one- and two-dimensional topological excitations—phase slips and vortices—in the formation of resistive states in quasi-two-dimensional superconductors in a wide temperature range below the mean-field transition temperature TC0. The widths w=100nm of our ultrathin NbN samples are substantially larger than the Ginzburg-Landau coherence length ξ=4nm, and the fluctuation resistivity above TC0 has a two-dimensional character. However, our data show that the resistivity below TC0 is produced by one-dimensional excitations—thermally activated phase slip strips (PSSs) overlapping the sample cross section. We also determine the scaling phase diagram, which shows that even in wider samples the PSS contribution dominates over vortices in a substantial region of current and/or temperature variations. Measuring the resistivity within 7 orders of magnitude, we find that the quantum phase slips can only be essential below this level. |
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1098-0121 |
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1423 |
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